Results 261 to 270 of about 23,511 (291)

Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu, Jing Li, Sandwip K. Dey, Henk De Waard, Steven Marcus   +4 more
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Characteristics and applications of plasma enhanced-atomic layer deposition

Thin Solid Films, 2011
Abstract Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ...
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Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Journal of Vacuum Science & Technology A, 2022
Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power ...
Kevin A. Hatch, Daniel C. Messina, Robert J. Nemanich   +2 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of Co on metal surfaces

Surface and Coatings Technology, 2015
Abstract Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO2, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system ...
Jaehong Yoon, Jeong-Gyu Song, Hyungjun Kim, Han-Bo-Ram Lee   +3 more
openaire   +1 more source

Plasma‐Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate

Chemical Vapor Deposition, 2007
AbstractIn this paper, a method for the plasma‐enhanced (PE) atomic layer deposition (ALD) of palladium on air‐exposed, annealed poly(p‐xylylene) (Parylene‐N, or PPX) is presented. Palladium is successfully deposited on PPX at 80 °C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (PdII(hfac)2)
G. A. Ten Eyck, S. Pimanpang, J. S. Juneja, H. Bakhru, T.‐M. Lu, G.‐C. Wang   +5 more
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Properties of AlN grown by plasma enhanced atomic layer deposition

Applied Surface Science, 2011
Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of ...
Bosund, Markus, Sajavaara, Timo, Laitinen, Mikko, Huhtio, Teppo, Putkonen, Matti, Airaksinen, Veli-Matti, Lipsanen, Harri   +7 more
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Plasma Enhanced Atomic Layer Deposition of TaN Thin Films

ECS Meeting Abstracts, 2010
Abstract not Available.
Paul Ma, Jiang Lu
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Fabrication of iron carbide by plasma-enhanced atomic layer deposition

Journal of Materials Research, 2019
Abstract
Xu Tian, Xiangyu Zhang, Yulian Hu, Bowen Liu, Yuxia Yuan, Lizhen Yang, Qiang Chen, Zhongwei Liu   +7 more
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Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films

Electrochemical and Solid-State Letters, 2004
This work was supported by the project of National Research Laboratory ~NRL!. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.
Kwon, OK, Kwon, SH, Park, HS, Kang, SW
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Plasma-enhanced atomic layer deposition of superconducting niobium nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016
Thin films of niobium nitride are useful for their physical, chemical, and electrical properties. NbN superconducting properties have been utilized in a wide range of applications. Plasma-enhanced atomic layer deposition (PEALD) of NbN with (t-butylimido) tris(diethylamido) niobium(V) and remote H2/N2 plasmas has been investigated.
Mark J. Sowa, Yonas Yemane, Jinsong Zhang, Johanna C. Palmstrom, Ling Ju, Nicholas C. Strandwitz, Fritz B. Prinz, J. Provine   +7 more
openaire   +1 more source