Results 261 to 270 of about 96,299 (290)
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Micro and Nanosystems, 2018
As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future.
Guangjie Yuan +3 more
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As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future.
Guangjie Yuan +3 more
openaire +1 more source
Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition
ECS Meeting Abstracts, 2006Abstract not Available.
Sun-Jin Yun, Jung-Wook Lim, Hyun-Tak Kim
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
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Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
openaire +1 more source
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005
Low via yield caused by low adhesion between Cu and a barrier metal is a cost issue when the atomic layer deposition (ALD) barrier metal process is integrated with Cu interconnection. To overcome this issue, an adhesion layer consisting of Ta-rich TaN obtained by plasma-enhanced ALD [i.e., ALD Ta(N)] is proposed.
Akira Furuya +2 more
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Low via yield caused by low adhesion between Cu and a barrier metal is a cost issue when the atomic layer deposition (ALD) barrier metal process is integrated with Cu interconnection. To overcome this issue, an adhesion layer consisting of Ta-rich TaN obtained by plasma-enhanced ALD [i.e., ALD Ta(N)] is proposed.
Akira Furuya +2 more
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Ferroelectric Tunnel Junction Optimization by Plasma-Enhanced Atomic Layer Deposition
2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020Ferroelectric tunnel junction (FTJ) based on alloyed HfO 2 and ZrO 2 is emerging as a promising two-terminal device candidate for the crossbar array for high density memory and compute-in-memory. FTJ is able to operate under non-destructive read mechanism as opposed to the ferroelectric capacitor.
Jae Hur +5 more
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Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015This paper reports on aluminum oxide (Al2O3) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O2 plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al2O3 films on silicon and indium tin oxide coated ...
Lukas Hoffmann +5 more
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TRANSPARENT TITANIUM DIOXIDE THIN FILM DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION
Integrated Ferroelectrics, 2006ABSTRACT TiO2 thin films were deposited at 200°C on Si (100) and quartz substrates using plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant source, Ti[N(CH3)2]4, and oxygen plasma, and then were annealed at various temperatures in oxygen ambient using a rapid thermal annealing (RTA) system.
G. X. LIU +7 more
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WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition
Applied Physics LettersWe report the demonstration of p-channel WS2 metal oxide field effect transistors (MOSFETs) using channels deposited by plasma-enhanced atomic layer deposition (PE-ALD). Substrate-gated devices using PE-ALD WS2 films deposited at 300 °C were fabricated with source-to-drain spacing, LDS, ranging from 0.1 to 1.1 µm. Despite being undoped, both 3.4-nm and
Ruixue Li +5 more
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Plasma enhanced atomic layer deposition of Ga
Journal of Materials Chemistry A, 2014Ranjith K. Ramachandran +7 more
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