Results 251 to 260 of about 5,812,653 (293)

Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015
Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known.
Triratna Muneshwar, Ken Cadien
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Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
Abstract Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO2 films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better ...
Duo Cao, Xinhong Cheng, Tingting Jia, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu   +7 more
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Properties of Aluminum Silicate Deposited by Plasma Enhanced Atomic Layer Deposition

ECS Meeting Abstracts, 2006
Abstract not Available.
Jung Wook Lim, Sun Jin Yun, Jin Ho Lee
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Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition

ECS Meeting Abstracts, 2006
Abstract not Available.
Sun-Jin Yun, Jung-Wook Lim, Hyun-Tak Kim
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Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition

ECS Transactions, 2011
AbaCus, a newly developed fluorine-free precursor has been used for room temperature copper deposition using plasma enhanced chemical vapor deposition (PEALD). This process has been characterized and the film properties investigated in term of composition, deposition rate, resistivity, grain size and platability.
Jiajun Mao, Eric Eisenbraun, Vincent Omarjee, Andrey Korolev, Christian Dussarrat   +4 more
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Characteristics and applications of plasma enhanced-atomic layer deposition

Thin Solid Films, 2011
Abstract Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ...
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Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu, Jing Li, Sandwip K. Dey, Henk De Waard, Steven Marcus   +4 more
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Fabrication of iron carbide by plasma-enhanced atomic layer deposition

Journal of Materials Research, 2019
Abstract
Xu Tian, Xiangyu Zhang, Yulian Hu, Bowen Liu, Yuxia Yuan, Lizhen Yang, Qiang Chen, Zhongwei Liu   +7 more
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Properties of AlN grown by plasma enhanced atomic layer deposition

Applied Surface Science, 2011
Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of ...
Bosund, Markus, Sajavaara, Timo, Laitinen, Mikko, Huhtio, Teppo, Putkonen, Matti, Airaksinen, Veli-Matti, Lipsanen, Harri   +7 more
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Plasma‐Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate

Chemical Vapor Deposition, 2007
AbstractIn this paper, a method for the plasma‐enhanced (PE) atomic layer deposition (ALD) of palladium on air‐exposed, annealed poly(p‐xylylene) (Parylene‐N, or PPX) is presented. Palladium is successfully deposited on PPX at 80 °C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (PdII(hfac)2)
G. A. Ten Eyck, S. Pimanpang, J. S. Juneja, H. Bakhru, T.‐M. Lu, G.‐C. Wang   +5 more
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