Results 141 to 150 of about 5,793,946 (166)

The Role of Surface Topography in Bacterial Adhesion to Amorphous TiO<sub>2</sub>-Coated PMMA. [PDF]

open access: yesDent J (Basel)
Zeneral Žuža I   +10 more
europepmc   +1 more source

Integration and electrical evaluation of WS<sub>2</sub> and MoS<sub>2</sub> fets in a 300 mm pilot line. [PDF]

open access: yesDiscov Electron
Schram T   +15 more
europepmc   +1 more source

High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs. [PDF]

open access: yesNat Commun
Liao F   +27 more
europepmc   +1 more source

Capped Vapor-Liquid-Solid Growth of Vanadium-Substituted Molybdenum Disulfide Ultrathin Films for Enhanced Photocatalytic Activity. [PDF]

open access: yesACS Nano
Huang PP   +18 more
europepmc   +1 more source

Atomic armor for thermal stability in nanoporous structures. [PDF]

open access: yesProc Natl Acad Sci U S A
Yang R   +8 more
europepmc   +1 more source

Growth of Zn-N Co-Doped Ga<sub>2</sub>O<sub>3</sub> Films by a New Scheme with Enhanced Optical Properties. [PDF]

open access: yesNanomaterials (Basel)
Liao D   +9 more
europepmc   +1 more source

Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

open access: yesSurface and Coatings Technology, 2017
Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations.
Manu Lahtinen   +2 more
exaly   +2 more sources

Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition [PDF]

open access: yesSolid-State Electronics, 2020
Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates.
Seung Min Lee   +2 more
exaly   +2 more sources

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