Results 201 to 210 of about 24,132 (263)

Synergistic Plasma Surface Engineering and Dielectric Tailoring of PDMS Toward High-Output Triboelectric Energy Harvesting. [PDF]

Small Methods
Lee K, Ryu JH, Chung CY, Jung K, Kwon O, Han H, Mhin S, Kim KM.   +7 more
europepmc   +1 more source

Mechanistic Study of Low-Temperature Plasma-Activated InP/Al₂O₃/SOI Direct Wafer Bonding for High Bonding Energy. [PDF]

ACS Omega
Peng C, Meng Y, Sun S, Shao E, Kang Q, Jin R, Ma W, Zhang Y, Xue H, Cao L, Wang C, Wang Q.   +11 more
europepmc   +1 more source

Halogen-Mediated Polymer-Free Recovery of Pristine MoS₂ Monolayers From Gold-Assisted Exfoliation. [PDF]

Small Methods
Muthu J, Khurshid F, Lin YC, Hsieh YP, Kalbáč M.   +4 more
europepmc   +1 more source

Porous-lift-off germanium membranes as lightweight, flexible, and cost-effective template for III-V space solar cells: a review. [PDF]

Commun Eng
Ali A, En-Nadir R, Mahboub CK, Mokeddem IE, Ayari A, Mével B, Ripa J, Turala A, Chapotot A, Proost P, Sharma R, Cho J, Dessein K, Boucherif A.   +13 more
europepmc   +1 more source

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Plasma and wet chemical etching of In0.5Ga0.5P

Journal of Electronic Materials, 1992
Dry and wet chemical etching of epitaxial In0, 5Ga0.5P layers grown on GaAs substrates by gas-source molecular beam epitaxy have been investigated. For chlorine-based dry etch mixtures (PCl3/Ar or CC12F2/Ar) the etching rate of InGaP increases linearly with dc self-bias on the sample, whereas CH4/H2-based mixtures produce slower etch rates ...
J. R. Lothian, J. M. Kuo, F. Ren, S. J. Pearton   +3 more
openaire   +1 more source

Analysis of chemical processes of plasma etching

Thin Solid Films, 1981
Abstract The emission spectrum of the plasma during the etching of silicon and SiO 2 layers was examined. Emission lines of fluorine (at 704 nm) and of CO (at 483.5 nm) were detected. The application of the latter line to the detection of the end point of etching is presented and the mechanism of etchant production is described in terms of the ...
G. Vályi, V. Schiller, J. Gyimesi, J. Gyulai   +3 more
openaire   +1 more source

Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

Plasma Sources Science and Technology, 1996
We report results of the characterization of the plasma - surface interactions of silicon and silicon dioxide in fluorocarbon discharges using real-time ellipsometry and post-plasma multi-technique surface analysis for chemical dry etching (CDE) and high-density plasma etching (HDPE).
G S Oehrlein, P J Matsuo, M F Doemling, N R Rueger, B E E Kastenmeier, M Schaepkens, Th Standaert, J J Beulens   +7 more
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Physical and chemical etching in plasmas

Thin Solid Films, 1981
Abstract The need to produce patterns by plasma techniques is explained and various etching phenomena are described. A brief chronological review is given of physical plasma techniques, including sputter and ion etching, and their application to the manufacture of electronic components.
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Plasma Chemical Etching of Silicon

2006 8th International Conference on Actual Problems of Electronic Instrument Engineering, 2006
The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer.
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Numerical simulation of plasma-chemical etching reactors

1997 21st International Conference on Microelectronics. Proceedings, 2002
The effect of nonisothermality of the operating continuum on the etching rate and uniformity in a planar plasma-chemical reactor was analyzed. The temperature of an electrode with a wafer was assumed specified and varied in a range which is characteristic for such reactors. Convection, molecular conduction and radiation were taken into account.
Yu.N. Grigoryev, A.G. Gorobchuk
openaire   +1 more source