Results 221 to 230 of about 22,855 (262)

Plasma chemical etching of silicon in mems - technology

Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004., 2005
In this work, the results for the modeling and experimental research of plasma chemical etching of Si are described. The model for the etching process is constructed. The results of accounts are given. The speed of Si etching, up to 6.5 /spl mu/m/min, experimentally is received.
openaire   +1 more source

Transport of chemically active species in plasma reactors for etching

Plasma Sources Science and Technology, 1997
The one-dimensional transport of the neutral reactive species in the planar reactor is studied theoretically to draw conclusions on the reactor performance at maximum etching rate. The etching rate is calculated as a function of the reactant flux entering the reactor for various flux densities of desorbing product from the etched surface.
V Martisovits, M Zahoran
openaire   +1 more source

Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics

Proceedings of 2011 6th International Forum on Strategic Technology, 2010
It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF 2 Cl 2 /O 2 . The load effect is studied.
openaire   +1 more source

Catalytic plasma chemical etching of silicon and silicon dioxide

SPIE Proceedings, 2003
It is reported about an activation of processes of plasmochemical etching of silicon, films of silicon dioxide and slices of crystalline piezoelectric quartz by some metals (Ag, Au, Cu, Sn, Pb, Na, K, Ca). The method of a catalytic plasmochemical etching of SiO 2 and Si under films of silver has been developed.
Yu. I. Dikarev, I. S. Surovtsev, S. M. Tsvetkov   +2 more
openaire   +1 more source

Analysis of Plasma Chemical Reactions in Dry Etching of Silicon Dioxide

Japanese Journal of Applied Physics, 1995
A computational model for chemical reactions in plasmas has been developed and applied to the gas-phase chemistry of dry etching of silicon dioxide. An ab-initio molecular orbital method is used to determine the dissociation processes and the threshold energies for gases and neutral radicals.
Hideyuki Kazumi, Kazutami Tago
openaire   +1 more source

Plasma chemical reactor for precision etching of elements with submicron size

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>
V.N. Pavlenko, V.G. Panchenko
openaire   +1 more source

Plasma-chemical reactor with low ion energy for selective etching

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
The results of physical and technological tests of the modernized plasma-chemical reactor are presented. The chemically active ion's energy may be controlled by the magnetic field intensity in the range from 15 eV to 100 eV. (If it is necessary the ion energy may be increased up to 300 eV). The current density is /spl les/l5 mA/cm/sup -2/.
V.V. Ustalov, O.A. Fedorovich, A.A. Vdovenkov, S.K. Levitskaja   +3 more
openaire   +1 more source

Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes

Japanese Journal of Applied Physics, 2003
Recently, we reported the successful development of a new accelerated quantum chemical molecular dynamics program "Colors", which is based on our original tight-binding theory. This methodology enables us to perform fast and accurate quantum chemical molecular dynamics simulations as compared to the conventional first principles molecular dynamics ...
Katsumi Sasata, Toshiyuki Yokosuka, Hitoshi Kurokawa, Seiichi Takami, Momoji Kubo, Akira Imamura, Tadashi Shinmura, Masaaki Kanoh, Parasuraman Selvam, Akira Miyamoto   +9 more
openaire   +1 more source

Numerical Model of Plasma-Chemical Etching of Silicon in $$CF_4/H_2$$ Plasma

2015
The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in \(CF_4/H_2\) gas mixture was studied.
openaire   +1 more source

INVESTIGATING THE REMOVAL RATE OF PYROGENIC SiO2 BY PLASMA CHEMICAL ETCHING

Automation and modeling in design and management
The study is devoted to identifying factors affecting the removal rate (etching) of pyrogenic silicon oxide (SiO2) films. The authors select the main adjustable parameters of the reactive ion plasma-chemical etching setup as external factors affecting the removal rate of pyrogenic SiO2.
Artem Adamov, Alina Golovko, Alexey Malakhanov, Yuliya Vasil'eva, Alexey Pavlov   +4 more
openaire   +1 more source