Results 221 to 230 of about 24,132 (263)

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

Semiconductors, 2018
The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C2F5Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied.
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov, V. I. Shashkin   +5 more
openaire   +1 more source

Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics

Proceedings of 2011 6th International Forum on Strategic Technology, 2010
It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF 2 Cl 2 /O 2 . The load effect is studied.
openaire   +1 more source

Catalytic plasma chemical etching of silicon and silicon dioxide

SPIE Proceedings, 2003
It is reported about an activation of processes of plasmochemical etching of silicon, films of silicon dioxide and slices of crystalline piezoelectric quartz by some metals (Ag, Au, Cu, Sn, Pb, Na, K, Ca). The method of a catalytic plasmochemical etching of SiO 2 and Si under films of silver has been developed.
Yu. I. Dikarev, I. S. Surovtsev, S. M. Tsvetkov   +2 more
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Plasma chemical aspects of magnetron ion etching with CF4/O2

Journal of Applied Physics, 1987
Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4 and CF4/O2 with respect to the plasma chemistry and the interaction of the plasma with both the etched substrate and the ...
A. A. Bright, S. Kaushik, G. S. Oehrlein
openaire   +1 more source

Analysis of Plasma Chemical Reactions in Dry Etching of Silicon Dioxide

Japanese Journal of Applied Physics, 1995
A computational model for chemical reactions in plasmas has been developed and applied to the gas-phase chemistry of dry etching of silicon dioxide. An ab-initio molecular orbital method is used to determine the dissociation processes and the threshold energies for gases and neutral radicals.
Hideyuki Kazumi, Kazutami Tago
openaire   +1 more source

Plasma chemical reactor for precision etching of elements with submicron size

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>
V.N. Pavlenko, V.G. Panchenko
openaire   +1 more source

Numerical Model of Plasma-Chemical Etching of Silicon in $$CF_4/H_2$$ Plasma

2015
The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in \(CF_4/H_2\) gas mixture was studied.
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Plasma-chemical reactor with low ion energy for selective etching

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
The results of physical and technological tests of the modernized plasma-chemical reactor are presented. The chemically active ion's energy may be controlled by the magnetic field intensity in the range from 15 eV to 100 eV. (If it is necessary the ion energy may be increased up to 300 eV). The current density is /spl les/l5 mA/cm/sup -2/.
V.V. Ustalov, O.A. Fedorovich, A.A. Vdovenkov, S.K. Levitskaja   +3 more
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INVESTIGATING THE REMOVAL RATE OF PYROGENIC SiO2 BY PLASMA CHEMICAL ETCHING

Automation and modeling in design and management
The study is devoted to identifying factors affecting the removal rate (etching) of pyrogenic silicon oxide (SiO2) films. The authors select the main adjustable parameters of the reactive ion plasma-chemical etching setup as external factors affecting the removal rate of pyrogenic SiO2.
Artem Adamov, Alina Golovko, Alexey Malakhanov, Yuliya Vasil'eva, Alexey Pavlov   +4 more
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Experimental research of ICP reactor for plasma-chemical etching

2015
The results of systematic experimental researches of plasma-chemical etching reactor in the inductive mode are presented in this paper. Measurements of the integral discharge parameters (inductor voltage, gas pressure, input power) have been carried out as well as probe measurements of spatial distribution of local plasma parameters (plasma density ...
Dudin, S.V., Zykov, A.V., Dahov, A.N., Farenik, V.I.   +3 more
openaire   +1 more source