Results 211 to 220 of about 22,855 (262)

Thickness-dependent structural evolution of a-C:H layers formed by one-step Ar/CH₄ plasma reduction for direct Cu bonding. [PDF]

Sci Rep
Lee H, Kim SE.
europepmc   +1 more source

The Influence of Non-Thermal Plasma Treatment on Osseointegration of Endosteal Implants Presenting Decompressing Vertical Chambers. [PDF]

Bioengineering (Basel)
Mehra S, Shah H, Munkwitz SE, Iglesias NJ, Joshua T, Tadisina KK, Fullerton N, Nayak VV, Witek L, Coelho PG.   +9 more
europepmc   +1 more source

Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols. [PDF]

Adv Mater
Tsarev S, Wu E, Cho K, Liu X, Lung QND, Hartman E, Sun T, Turedi B, Matt GJ, Frick S, Siol S, Jang T, Shorubalko I, Yakunin S, Kovalenko MV.   +14 more
europepmc   +1 more source

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography. [PDF]

Chem Sci
Chu TTH, Le DN, Lee M, Narayan DM, Kim DS, Shirodkar S, Choe M, Yoo S, Tiwale N, Choi R, Ahn J, Sung MM, Nam CY, Kim J.   +13 more
europepmc   +1 more source

Osseointegration of implant with various surface treatments. [PDF]

Bioinformation
Kalawat A, Zakaria WM, Kaur G, Gupta P, Srivastava S, Chandra A, Viswaja K.   +6 more
europepmc   +1 more source

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Plasma Chemical Etching of Silicon

2006 8th International Conference on Actual Problems of Electronic Instrument Engineering, 2006
The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer.
B K Bogomolov
exaly   +4 more sources

Ultrahigh-rate plasma jet chemical etching of silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2001
A very high-rate chemical dry etching technique based on the plasma jet principle is presented. In this system a gas mixture of Ar/SF6/O2 is fed into the vacuum system through a nozzle. In the vicinity of the nozzle a microwave-excited plasma jet is formed.
Schindler A
exaly   +2 more sources

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

Semiconductors, 2018
The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C2F5Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied.
Pavel Yunin, M N Drozdov, Drozdov M N
exaly   +2 more sources

Plasma and wet chemical etching of In0.5Ga0.5P

Journal of Electronic Materials, 1992
Dry and wet chemical etching of epitaxial In0, 5Ga0.5P layers grown on GaAs substrates by gas-source molecular beam epitaxy have been investigated. For chlorine-based dry etch mixtures (PCl3/Ar or CC12F2/Ar) the etching rate of InGaP increases linearly with dc self-bias on the sample, whereas CH4/H2-based mixtures produce slower etch rates ...
J. R. Lothian, J. M. Kuo, F. Ren, S. J. Pearton   +3 more
openaire   +1 more source

Plasma chemical etching of silicon (optimization of process)

Proceedings. The 9th Russian-Korean International Symposium on Science and Technology, 2005. KORUS 2005., 2006
The basic results of plasma etching of silicon in CCl/sub 2/F/sub 2//O/sub 2/ in quartz reactor with teflon polymer by a covering are considered. The inconsistent model of plasma chemical etching (PCE) of silicon in plasma CCl/sub 2/F/sub 2//O/sub 2/ in conditions of active delivery chemically active particles (CAP) is constructed at the expense of ...
openaire   +1 more source