Results 211 to 220 of about 24,132 (263)

Improvement of resist mask plasma etching durability by plasma chemical polymerization

Microelectronic Engineering, 1992
Abstract A new method for improving resist plasma etching durability by means of plasma chemical modification has been developed. It was shown that organic films formed in radio frequency discharge in the mixture of argon and methylmethacrylate(MMA) while submitted to r.f. plasma in conditions usually used for etching in RIE mode were found to have 8–
V.F. Limanova, D.B. Askerov, A.V. Kovalchuk, V.N. Vasilets   +3 more
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Plasma chemical etching of silicon (optimization of process)

Proceedings. The 9th Russian-Korean International Symposium on Science and Technology, 2005. KORUS 2005., 2006
The basic results of plasma etching of silicon in CCl/sub 2/F/sub 2//O/sub 2/ in quartz reactor with teflon polymer by a covering are considered. The inconsistent model of plasma chemical etching (PCE) of silicon in plasma CCl/sub 2/F/sub 2//O/sub 2/ in conditions of active delivery chemically active particles (CAP) is constructed at the expense of ...
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Theory of plasma chemical transport etching of gold in a chlorine plasma

Thin Solid Films, 1981
Abstract The behavior of the reactive ion etching of gold in a chlorine plasma reported earlier is shown in this paper to be interpretable in terms of a theory of chemical vapor transport, modified to account for the effect of species generated in the plasma and transported across the plasma sheaths to the reacting surfaces. The interpretation of the
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Spectral investigation of the plasma-chemical etching of silicon dioxide

Journal of Applied Spectroscopy, 1979
Practical investigations in the past few years have shown the promising nature of the use of the plasma-chemical method of etching silicon dioxide films during the production of integrated circuits. Nevertheless, with rare exceptions [1-3], the available studies were carried out without calling upon modern diagnostic methods for studying the plasma ...
M. N. Bosyakov, N. N. Nikiforenko, A. A. Labuda   +2 more
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Ultrahigh-rate plasma jet chemical etching of silicon

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001
A very high-rate chemical dry etching technique based on the plasma jet principle is presented. In this system a gas mixture of Ar/SF6/O2 is fed into the vacuum system through a nozzle. In the vicinity of the nozzle a microwave-excited plasma jet is formed.
Th. Arnold, G. Boehm, A. Schindler
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Production of surface patterns by chemical and plasma etching

Journal of Physics E: Scientific Instruments, 1981
The methods of protecting and etching surface areas to obtain lateral pattern dimensions of 50 mu m are reviewed. Protection materials, resists, which can be selectively dissolved, i.e. developed, after exposure to UV, electron beam, X-ray or ionic radiation are considered.
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Etching characteristics of GaN by plasma chemical vaporization machining

Surface and Interface Analysis, 2008
Abstract A high‐quality bulk gallium nitride (GaN) substrate, which is suitable for high‐quality homoepitaxial growth, is indispensable for realizing high‐performance GaN devices. With improvement in the quality of the bulk GaN substrate, the removal of subsurface damage induced during surface polishing has become
Yasuji Nakahama, Norio Kanetsuki, Takeshi Funaki, Masaru Kadono, Yasuhisa Sano, Kazuya Yamamura, Katsuyoshi Endo, Yuzo Mori   +7 more
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Plasma chemical etching of silicon in mems - technology

Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004., 2005
In this work, the results for the modeling and experimental research of plasma chemical etching of Si are described. The model for the etching process is constructed. The results of accounts are given. The speed of Si etching, up to 6.5 /spl mu/m/min, experimentally is received.
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Quantum-chemical approach to the elementary steps of plasma etching

Chemical Physics Letters, 1983
Abstract We derive for the first time a mechanism of reactive plasma etching in the system Si/F by the quantum-chemical approach. SiF 2 -like species at the surface play an important role. SiF 3 surface complexes also occur. The final etching product SiF 4 is formed with high probability in the gas phase.
Dieter K. Fricke, Hans Müller, Ch. Opitz   +2 more
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Transport of chemically active species in plasma reactors for etching

Plasma Sources Science and Technology, 1997
The one-dimensional transport of the neutral reactive species in the planar reactor is studied theoretically to draw conclusions on the reactor performance at maximum etching rate. The etching rate is calculated as a function of the reactant flux entering the reactor for various flux densities of desorbing product from the etched surface.
V Martisovits, M Zahoran
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