Results 261 to 270 of about 3,124 (304)

Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad

Advanced Materials Research, 2010
The polishing pad plays a significant role in the Chemical Mechanical Polishing (CMP) process and its wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is introduced and the law of pad wear along the pad radius is discussed, thus a new FAP with optimized pattern is designed and prepared in order. The flatness of
Mao Li, Yong Wei Zhu, Jun Li, Jian Feng Ye, Ji Long Fan   +4 more
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GRIN pad polishing

PhotonicsViews, 2022
AbstractA new concept for CNC polishing pads is given by the gradient index (GRIN) pad polishing tools. Instead of gluing polishing foils as a layer onto metallic tool holders that have the spherical surface to be polished, 3D‐printed GRIN pads are applied directly to the CNC tool axis.
Oliver Fähnle, Kerstin Kern, Jan Allaart, Henrik Surberg, Jens Bliedtner, Christian Schulze, Sebastian Henkel, Volker Heineck, Jürgen Bode, Michael Wagner   +9 more
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Variation of polish pad shape during pad dressing

Materials Science and Engineering: B, 1999
Abstract In silicon wafer polishing and CMP processes, polish pad dressing (conditioning) is often used to restore pad performance. In this report, variation of polish pad shape during dressing is studied by using diamond-plated cup wheels and sandpaper rings, respectively. Result shows that pad shape becomes concave after certain amount of dressing.
Yi-yang Zhou, Eugene C Davis
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Thermal Effects of Mechanical Polishing and Conditioning on Polishing Pads

Key Engineering Materials, 2015
Polishing process is a primary technique for planarization of material surface in manufacture fabrication. The pad structure and its material properties are important to determine the polish rate and planarity that can be achieved by the polishing process.
Hung Jung Tsai, Chia Hao Chuang
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A statistical polishing pad model for chemical-mechanical polishing

Proceedings of IEEE International Electron Devices Meeting, 2002
Chemical mechanical polishing (CMP) has emerged as a critical technology for advanced integrated circuit fabrication. This paper presents for the first time a physical CMP model that includes the effects of polishing pad roughness and dynamic interaction between pad and wafer.
null Tat-Kwan Yu, C.C. Yu, M. Orlowski
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Modeling of Polishing Pad Wear in Chemical Mechanical Polishing

Key Engineering Materials, 2010
The polishing pad’s wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is established using the idea of Finite Element Analysis (FEA) and the effect of polishing parameters on the wear of polishing pad is discussed.
Mao Li, Yong Wei Zhu, Jun Li, Kui Lin
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The figure simulation of the polishing pad in the continuous polishing process

SPIE Proceedings, 2014
The figures of the polishing pad are of great significance for the figures of optical workpieces in the continuous polishing process. Three main factors which affect the figures of the pad, including the polishing pad creep deformation, the calibration plate grinding and the ambient change in temperature, are analyzed in this work.
Haiyang Shan, Xueke Xu, Hongbo He, Shijie Liu, Chaoyang Wei, Kui Yi, Jianda Shao   +6 more
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Effect of Polishing Time and Pressure on Polishing Pad Performance

Key Engineering Materials, 2008
This paper experimentally investigates the effect of time and pressure on the condition of polishing pads and the material removal rate (MRR) of single crystal silicon. It was found that as the pad deteriorates with time, MRR decreases. Surfaces with a required quality can only be achieved before the texture deterioration reaches a critical limit. At a
A.Q. Biddut, Liang Chi Zhang, Y.M. Ali
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Stochastic Models for Pad Structure and Pad Conditioning Used in Chemical-Mechanical Polishing

Journal of Engineering Mathematics, 2006
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Wiegand, Susanne, Stoyan, Dietrich
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Characteristics in chemical-mechanical polishing of copper: comparison of polishing pads

Applied Surface Science, 1997
Abstract A systematic study of Cu CMP in terms of the effect of polishing pad properties on the process characteristics has been performed. The IC 1000 and IC 1000/SUBA IV polishing pads were compared with regard to the polish rates, across-wafer uniformity, planarity and pattern sensitivity of the CMP process. Polishing with the IC 1000/SUBA IV pad,
Z. Stavreva, D. Zeidler, M. Plötner, K. Drescher   +3 more
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