Results 121 to 130 of about 10,517,225 (330)

2D Tellurene‐Based Optoelectronic Memristor with Temporal Dynamics for Multimodal Reservoir Computing System

Advanced Science, EarlyView.
The SPP‐treated Te‐based optoelectronic memristor demonstrates multimodal synaptic function in a single device under infrared optical and electrical stimuli. The multimode RC system is adept for processing sequence signals, including multisensory fusion and ECG pattern recognition.
Jingyao Bian, Zhuangzhuang Li, Shuang Liang, Ye Tao, Zhongqiang Wang, Yongxing Zhu, Changhua Wang, Haiyang Xu, Yichun Liu   +8 more
wiley   +1 more source

Generation of slow postsynaptic potentials without increases in ionic conductance.

, 1968
Haruo Kobayashi, Benjamin Libet
openalex   +1 more source

Serotonin‐mediated inhibitory postsynaptic potential in guinea‐pig prepositus hypoglossi and feedback inhibition by serotonin.

Journal of Physiology, 1990
D. Bobker, J. Williams
semanticscholar   +1 more source

Enhanced Protein Synthesis and Hippocampus‐Dependent Memory via Inhibition of YTHDF2‐Mediated m6A mRNA Degradation

Advanced Science, EarlyView.
YTHDF2‐mediated m6A mRNA decay critically regulates learning and memory. Its forebrain‐specific knockout in mice impedes degradation of m6A‐modified mRNAs, enhancing hippocampal synaptic transmission, protein synthesis, and memory. Conversely, hippocampal YTHDF2 reintroduction or SEMA4B reduction reverses this enhancement, while its overexpression ...
Kuan Li, Chen Guo, Xiaoli Wu, Cuiting Wu, Songfen Wu, Si Su, Min Wu, Xidan Zhou, Si Li, Yihui Cui, Tao Zhou   +10 more
wiley   +1 more source

M1 Muscarinic Receptors Boost Synaptic Potentials and Calcium Influx in Dendritic Spines by Inhibiting Postsynaptic SK Channels [PDF]

, 2010
Andrew J. Giessel, Bernardo L. Sabatini
openalex   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Fast and slow inhibitory postsynaptic potentials in the piriform cortex neurons.

, 1978
Kensaku Mori, Masahiko Satou, Sadayuki F. Takagi   +2 more
openalex   +2 more sources

Postsynaptic current bursts instruct action potential firing at a graded synapse [PDF]

, 2013
Ping Liu, Bojun Chen, Zhao‐Wen Wang
openalex   +1 more source

A novel method for reliably measuring miniature and spontaneous postsynaptic potentials/currents in whole-cell patch clamp recordings in the central nervous system

, 2022
Martynas Dervinis, Guy Major
openalex   +1 more source

Unravel the Role of Atomic Layer Deposited Al2O3 with Different Precursors on Optoelectronic Properties of IGZO Synaptic Transistors

Advanced Electronic Materials, EarlyView.
Extending visible‐light response is key for IGZO synaptic phototransistors. This work unravels the origin of subgap absorption and contact properties in the IGZO/Al2O3 structure. While Al2O3 using H2O as the oxidant induces subgap defects from H‐related impurities, thus enhancing photo‐sensitivity (≥106) and responsivity (≥0.1 A W−1), Al2O3 using O3 ...
Yanzhuo Wei, Guohui Li, Hongwei Hao, Chen Chen, Dongdong Li, Yanxia Cui, Shan‐Ting Zhang   +6 more
wiley   +1 more source