Results 51 to 60 of about 13,721,918 (142)
The Journal of Engineering, 2019 Modular multi-level converter (MMC) with press-packing IGBT devices is the popular and key equipment of VSC-HVDC system, its reliability is directly related to the equipment safe operation.
Li Hui +6 more
doaj +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This work investigates the displacement amplitude of the contact surfaces between the Si chip and the Mo emitter plate of a PP‐IGBT module during power cycling on the basis of experimental measurements, as well as the effects of loading conditions such as the load current, switching time and normal load on the displacement amplitude.
Tong An +5 more
wiley +1 more source
3D Lumped Thermal Model for Compliant Press‐Pack IGBT Submodule in MMC
IET Power Electronics, Volume 19, Issue 1, January/December 2026.We present a 3D lumped thermal model for compliant press‐pack IGBT submodules in MMCs. The model accounts for double‐sided cooling and thermal coupling, achieving high accuracy and efficiency, making it suitable for real‐time condition monitoring. ABSTRACT The compliant press‐pack IGBT is widely used in modular multilevel converters (MMCs).
Shuguo Gao +5 more
wiley +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.Bond wire lift‐off is one of the primary failure modes in power modules and early identification of its degradation state and lift‐off ratio is crucial for ensuring reliable operation. Conventional methods have limitations in quantifying early‐stage lift‐off defects.
Xuanyi Liu +6 more
wiley +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a novel on‐state voltage measurement circuit (OVMC) for accurate online Vce extraction. By adopting a power‐balanced differential diode topology, the proposed circuit minimises the Vce measurement error. The OVMC is applied to the Buck operating condition to monitor the junction temperature of chips inside a press‐pack IGBT ...
Yihe Zhang +7 more
wiley +1 more source
A method for predicting IGBT junction temperature under transient condition [PDF]
, 2008 In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device.
Putrus, G. A. +6 more
core +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.A sensor structure design scheme is proposed in this work by establishing the transmission characteristic model, which quantitatively calculates geometric parameters and sensitivity relationships between tunnel magneto‐resistance (TMR) and Rogowski coils.
Ze Zhou +4 more
wiley +1 more source
Condition monitoring of press-pack IGBT devices using deformation detection approach
, 2020 \ua9 PEMD 2020. All right reserved. Press pack Insulated Gate Bipolar Transistors (PP IGBT) are gaining more attention in HVDC power transmission systems due to their high-power density and high reliability compared with conventional power modules ...
Li G +7 more
core +4 more sources
Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
core +1 more source
Busbar Interference Correction for Non‐Invasive Current Distribution Sensing in Press‐Pack IGBTs
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a busbar‐interference correction method for non‐invasive sensing of internal current distribution in press‐pack IGBTs under converter‐valve conditions. By using state‐differential magnetic‐field reconstruction, the method suppresses common‐mode interference from side busbars and improves current‐offset direction identification ...
Yong Yang +6 more
wiley +1 more source