Results 91 to 100 of about 139 (128)

Optimization of the thermal contact resistance within press pack IGBTs

Microelectronics Reliability, 2017
Abstract The research of thermal contact resistance between multi-layers within press pack IGBTs (PP IGBTs) is significant for optimizing the PP IGBTs' thermal resistance to improve reliability, as the thermal contact resistance accounts for approximately 50% of the total thermal resistance of PP IGBTs.
Erping Deng, Zhibin Zhao, Peng Zhang, Yongzhang Huang, Jinyuan Li   +4 more
openaire   +1 more source

Press-pack IGBTs, semiconductor switches for pulse power

IEEE Conference Record - Abstracts. PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference (Cat. No.01CH37255), 2002
Summary form only given as follows. The semiconductor switch has been shown to be a realistic alternative to the thermionic device in pulse power applications. The introduction of new press-pack IGBT technology offers the opportunity to extend the range of high power applications for which a semiconductor switch may be considered.
F. Wakeman, W. Findlay
openaire   +1 more source

A Gating Path Optimization Method for Press-Pack IGBT

2020 IEEE 1st China International Youth Conference on Electrical Engineering (CIYCEE), 2020
IGBT devices are widely used in high-voltage and high-power applications. IGBT module has two kinds of packaging structure, which are welded IGBT and press-pack IGBT (PP-IGBT). Since a PP-IGBT module can integrate more chips and diode chips to obtain a large current capacity, it has been widely used in high power applications.
Huaidong Min, Zhao Wang, Yu Chen, Li Peng, Yong Kang   +4 more
openaire   +1 more source

Snubbered high-power press-pack IGBT converter

2013 15th European Conference on Power Electronics and Applications (EPE), 2013
A medium-voltage IGBT converter with turn-on snubber is presented. The drastic reduction of turn-on losses allows the inverter to reach a peak output power well beyond the 12-MVA mark. The paper discusses the design challenges for the new inverter and presents test results.
Thomas Bruckner, Piotr Sadowski, Roland Jakob   +2 more
openaire   +1 more source

4.5kV press pack IGBT designed for ruggedness and reliability

Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., 2004
A novel press pack IGBT (PPI) with a rating of up to 4500 V and 2000 A is presented. During the development of this new component, special emphasis was placed on the ease of use by system manufacturers. The mechanical design is optimized in order to facilitate the clamping of the PPI in long stacks. Even if the clamping in the stack has severe pressure
S. Eicher, M. Rahimo, E. Tsyplakov, D. Schneider, A. Kopta, U. Schlapbach, E. Carroll   +6 more
openaire   +1 more source

Modelling the cauer thermal network for press pack IGBTs

2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP), 2017
Press Pack IGBTs (PP IGBTs) have gradually applied in the high voltage and high current areas, for their high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper, and the difference between the IGBT and FRD chips is ...
Jinyuan Li, Erping Deng, Zhibin Zhao, Peng Zhang, Yaosheng Li   +4 more
openaire   +1 more source

Innovative press pack modules for high power IGBTs

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002
A new IGBT press pack package was developed to meet increasingly challenging requirements for high power converters, such as in power systems applications. The package offers significantly high tolerance to pressure nonuniformity and allows up to 100 kN of stacking pressure while effectively protecting sensitive silicon chips by using a flexible ...
S. Kaufmann, T. Lang, R. Chokhawala
openaire   +1 more source

Innovative metal system for IGBT press pack modules

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings., 2004
Two important design aspects encountered in IGBT press pack modules used for HVDC applications are short circuit failure mode (SCFM) and intermittent operating life (IOL) capabilities. The requirement that press-pack IGBT (PPI) fail safely into a short causes a design conflict with the module's desired capability to survive a high number of power ...
S. Gunturi, J. Assal, D. Schneider, S. Eicher   +3 more
openaire   +1 more source

FEM Simulation and Lifetime Prediction of Press-Pack IGBT: A Review

2020 4th International Conference on HVDC (HVDC), 2020
Press-pack IGBTs gradually replaces the conventional soldering IGBT modules in high power and high voltage application, however, the research on its reliability and lifetime prediction is much less mature. FEM is an effective method to analyze the reliability of press-pack IGBT.
Yan Li, Zhipeng He, Weili Guo, Ting Hou, Yuke Ji, Dingkun Ma   +5 more
openaire   +1 more source

Study on Thermal Resistance Performance of Press-Pack IGBT Modules

2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET)
Junming Zhang
exaly   +2 more sources