Results 91 to 100 of about 17,691,121 (147)

Clamping Force Distribution within Press Pack IGBTs

open access: yes, 2018
Erping Deng   +3 more
openaire   +2 more sources

Study on the Cauer Thermal Network Model of Press Pack IGBTs

open access: yesIOP Conference Series: Materials Science and Engineering, 2018
Jinyuan Li   +4 more
openaire   +1 more source

A 3D Thermal Network Model for Monitoring Imbalanced Thermal Distribution of Press-Pack IGBT Modules in MMC-HVDC Applications [PDF]

open access: yesEnergies, 2019
In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Haoze Luo, Yao Chang, Frede Blaabjerg
exaly   +4 more sources
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Analysis on the Difference of the Characteristic Between High Power IGBT Modules and Press Pack IGBTs

Microelectronics Reliability, 2017
Abstract The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications.
Erping Deng   +2 more
exaly   +2 more sources

Study on the Methods to Measure the Junction-to-Case Thermal Resistance of IGBT Modules and Press Pack IGBTs

Microelectronics Reliability, 2017
Abstract The accurate measurement of the junction-to-case thermal resistance of Insulated Gate Bipolar Transistor (IGBT) devices is notably important for manufacturers to optimize the internal structure of packaging in order to improve its reliability and for users to take full advantage of the devices.
Erping Deng   +2 more
exaly   +2 more sources

Integrated Approach for Reliability Assessment of Press-pack IGBT Chips

open access: yes, 2000
Product development in the power electronic industry is characterized by short time-to-market and high reliability. Improved design methods and advanced modeling techniques are therefore required to support package design selection and to arrive at lifetime prediction algorithms for failure prevention.
NICOLETTO, Gianni   +2 more
openaire   +3 more sources

Characterizations of a Proposed 3300-V Press-Pack IGBT Module Using Nanosilver Paste for High-Voltage Applications

open access: yesIEEE Journal of Emerging and Selected Topics in Power Electronics, 2018
Nanosilver paste was used in this study as a die-attachment material for 3300-V power chips to eliminate the pressure contact of a press-pack power module.
Yunhui Mei, Guo-Quan Lu
exaly   +2 more sources

Lifetime Prediction for Press Pack IGBT Device by Considering Fretting Wear Failure

open access: yesMicroelectronics Reliability, 2023
The reliability of the Press-Pack Insulated Gate Bipolar Transistor (PP-IGBT) device is important to guarantee the safety of modular multilevel converter (MMC).
Ran Yao, Wei Lai, Xianping Chen
exaly   +2 more sources

Research on Long-Term Reliability of Silver Sintered Press-Pack IGBT Modules

open access: yesPower Electronic Devices and Components, 2022
Owing to the advantages of short-circuit failure mode, double-sided heat dissipation, and low thermal resistance, press-pack insulated gate bipolar transistors (PP-IGBTs) are widely used in high-power-density applications, such as high-voltage direct ...
Ran Yao, Wei Lai, Renkuan Liu
exaly   +3 more sources

Press Pack IGBTs for MVDC-breaker Applications

ISPS'23 Proceedings, 2023
With the rising demand for higher power densities and robust system control, the need for using press pack IGBT (PPI) devices in medium voltage (MV) applications is also increasing. So far PPI manufacturers have majorly focused on devices with paralleling of IGBTs/diodes inside a single housing, that drives thousands of Amperes and is used for high ...
Koushik Sasmal   +4 more
openaire   +1 more source

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