Results 91 to 100 of about 17,691,121 (147)
Clamping Force Distribution within Press Pack IGBTs
Erping Deng +3 more
openaire +2 more sources
Study on the Cauer Thermal Network Model of Press Pack IGBTs
Jinyuan Li +4 more
openaire +1 more source
A 3D Thermal Network Model for Monitoring Imbalanced Thermal Distribution of Press-Pack IGBT Modules in MMC-HVDC Applications [PDF]
In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Haoze Luo, Yao Chang, Frede Blaabjerg
exaly +4 more sources
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Microelectronics Reliability, 2017
Abstract The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications.
Erping Deng +2 more
exaly +2 more sources
Abstract The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications.
Erping Deng +2 more
exaly +2 more sources
Microelectronics Reliability, 2017
Abstract The accurate measurement of the junction-to-case thermal resistance of Insulated Gate Bipolar Transistor (IGBT) devices is notably important for manufacturers to optimize the internal structure of packaging in order to improve its reliability and for users to take full advantage of the devices.
Erping Deng +2 more
exaly +2 more sources
Abstract The accurate measurement of the junction-to-case thermal resistance of Insulated Gate Bipolar Transistor (IGBT) devices is notably important for manufacturers to optimize the internal structure of packaging in order to improve its reliability and for users to take full advantage of the devices.
Erping Deng +2 more
exaly +2 more sources
Integrated Approach for Reliability Assessment of Press-pack IGBT Chips
Product development in the power electronic industry is characterized by short time-to-market and high reliability. Improved design methods and advanced modeling techniques are therefore required to support package design selection and to arrive at lifetime prediction algorithms for failure prevention.
NICOLETTO, Gianni +2 more
openaire +3 more sources
Nanosilver paste was used in this study as a die-attachment material for 3300-V power chips to eliminate the pressure contact of a press-pack power module.
Yunhui Mei, Guo-Quan Lu
exaly +2 more sources
Lifetime Prediction for Press Pack IGBT Device by Considering Fretting Wear Failure
The reliability of the Press-Pack Insulated Gate Bipolar Transistor (PP-IGBT) device is important to guarantee the safety of modular multilevel converter (MMC).
Ran Yao, Wei Lai, Xianping Chen
exaly +2 more sources
Research on Long-Term Reliability of Silver Sintered Press-Pack IGBT Modules
Owing to the advantages of short-circuit failure mode, double-sided heat dissipation, and low thermal resistance, press-pack insulated gate bipolar transistors (PP-IGBTs) are widely used in high-power-density applications, such as high-voltage direct ...
Ran Yao, Wei Lai, Renkuan Liu
exaly +3 more sources
Press Pack IGBTs for MVDC-breaker Applications
ISPS'23 Proceedings, 2023With the rising demand for higher power densities and robust system control, the need for using press pack IGBT (PPI) devices in medium voltage (MV) applications is also increasing. So far PPI manufacturers have majorly focused on devices with paralleling of IGBTs/diodes inside a single housing, that drives thousands of Amperes and is used for high ...
Koushik Sasmal +4 more
openaire +1 more source

