Results 141 to 150 of about 1,437 (189)

New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012
The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias.
null Runsheng Wang, null Jibin Zou, null Xiaoqing Xu, null Changze Liu, null Jinhua Liu, null Hanming Wu, null Yangyuan Wang, null Ru Huang   +7 more
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Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs

2018 IEEE International Reliability Physics Symposium (IRPS), 2018
In this paper, based on the complex random telegraph noise (RTN) data in FinFETs, the impacts of the trap coupling effect on RTN amplitude are studied statistically. The coupling effect is found to be enhanced by the double-side coupling mechanism in FinFETs.
Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang, Yangyuan Wang, Ru Huang   +6 more
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Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices

2016 IEEE International Nanoelectronics Conference (INEC), 2016
In this paper, the amplitude (ΔI d /I d ) distribution of random telegraph noise (RTN) induced by each trap in nanoscale devices is investigated based on the statistical experimental results. The RTN states are extracted through the proposed Gaussian mixture model (GMM).
Zexuan Zhang, Shaofeng Guo, Xiaobo Jiang, Runsheng Wang, Ru Huang, Jibin Zou   +5 more
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Random telegraph noise (RTN) in 14nm logic technology: High volume data extraction and analysis

2016 IEEE Symposium on VLSI Technology, 2016
With continued scaling of CMOS technology, numerous concerns have been raised about random telegraph noise (RTN) possibly matching or exceeding the random process variation in threshold voltage (V th )[1], [2]. These studies are usually limited by the small sample size of the measurements, relying on modeling for projecting to high sigma. In this work,
S. Dongaonkar, M. D. Giles, A. Kornfeld, B. Grossnickle, J. Yoon   +4 more
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Statistical comparison of random telegraph noise (RTN) in bulk and fully depleted SOI MOSFETs

Ulis 2011 Ultimate Integration on Silicon, 2011
Random telegraph noise (RTN) in bulk and fully depleted (FD) SOI MOSFETs are measured by device matrix array (DMA) TEG for statistical analysis. It is found that, in the tail part of the distribution, threshold voltage change by RTN (ΔV th ) in FD SOI MOSFETs is smaller than that in Bulk MOSFETs.
Jun Nishimura, Takuya Saraya, Toshiro Hiramoto   +2 more
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Impacts of random telegraph noise (RTN) on the Energy-Delay tradeoffs of logic circuits

2016 China Semiconductor Technology International Conference (CSTIC), 2016
In this paper, the impacts of random telegraph noise (RTN) on delay and energy of digital logic circuits are studied. The conventional method of extracting logic gate delay is found inaccurate due to the bias dependency of RTN amplitude. Thus an appropriate measuring strategy is proposed, based on which the impact of single RTN on circuit delay is ...
Yang Zhang, Xiaobo Jiang, Junyao Wang, Shaofeng Guo, Yichen Fang, Runsheng Wang, Mulong Luo, Ru Huang   +7 more
openaire   +1 more source

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

2018 IEEE International Electron Devices Meeting (IEDM), 2018
In this paper, the recent advances of our studies on RTN are presented from device, circuit, and EDA perspectives. RTN characteristics in FinFETs are investigated and compared with planar devices. The AC RTN effect is discussed for understanding RTN impacts in practical circuit applications. Then, a new and efficient circuit simulation platform for RTN
Runsheng Wang, Shaofeng Guo, Zhe Zhang, Qingxue Wang, Dehuang Wu, Joddy Wang, Ru Huang   +6 more
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AC Random Telegraph Noise (AC RTN) in Nanoscale MOS Devices

2017
Metal oxide semiconductor thin-film transistors (TFTs) have been recognized as the most promising technology in the field of flexible electronics and flat-panel displays because of their high mobility, low-temperature fabrication process, and spatial uniformity of device characteristics.
Jibin Zou, Shaofeng Guo, Ru Huang, Runsheng Wang   +3 more
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Analysis of Random Telegraph Noise (RTN) at Near-Threshold Operation by Measuring 154k Ring Oscillators

2019 IEEE International Reliability Physics Symposium (IRPS), 2019
We present measurement results of delay fluctuations induced by random telegraph noise (RTN) from 154k 7-stage ring oscillators (RO). Measurement results are obtained from test chips fabricated in a 65-nm Silicon-On-Thin-Buried-Oxide process. Measurement results reveal that RTN-induced frequency fluctuation which corresponds to the underlying threshold
A.K.M. Mahfuzul Islam, Ryota Shimizu, Hidetoshi Onodera   +2 more
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Too noisy at the nanoscale? — The rise of random telegraph noise (RTN) in devices and circuits

2016 IEEE International Nanoelectronics Conference (INEC), 2016
This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale MOS devices and circuits.
Runsheng Wang, Shaofeng Guo, Pengpeng Ren, Mulong Luo, Jibin Zou, Ru Huang   +5 more
openaire   +1 more source