Results 151 to 160 of about 1,437 (189)
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2014 Silicon Nanoelectronics Workshop (SNW), 2014
Statistical distributions of amplitude (ΔId) and Vth shift (ΔVth) of random telegraph noise (RTN) are analyzed by measuring 9000 transistors at various gate voltage. It is found that, while both worst ΔId and ΔVth are larger in subthreshold region than in strong inversion, median ΔVth is larger in strong inversion.
Hitoshi Ohno +3 more
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Statistical distributions of amplitude (ΔId) and Vth shift (ΔVth) of random telegraph noise (RTN) are analyzed by measuring 9000 transistors at various gate voltage. It is found that, while both worst ΔId and ΔVth are larger in subthreshold region than in strong inversion, median ΔVth is larger in strong inversion.
Hitoshi Ohno +3 more
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2012 International Electron Devices Meeting, 2012
We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statistical distribution describing the probability of occurrence of a read current fluctuation of a given amplitude.
D. Veksler +9 more
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We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statistical distribution describing the probability of occurrence of a read current fluctuation of a given amplitude.
D. Veksler +9 more
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On the AC random telegraph noise (RTN) in MOS devices: An improved multi-phonon based model
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012As devices scaling down into nanometer region, the random telegraph noise (RTN) has become a significant issue for device variability and reliability, which has been extensively studied at DC conditions and recently also at AC conditions. The nonradiative multiphonon (NMP) theory has been introduced to describe the statistical characteristics of DC RTN;
Nanbo Gong +4 more
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Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET
Solid-State Electronics, 2014Abstract We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor ( n -MOSFET). The dependence on drain to gate bias was then considered.
Quan Nguyen Gia +3 more
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2010 Proceedings of the European Solid State Device Research Conference, 2010
In this paper, we have proposed an extraction method to find accurate oxide trap locations and energy level in recessed channel structure such as SRCAT. Analytical models for poly depletion effect and the surface potential variation in the cylindrical coordinate were derived and applied to DRAM SRCAT.
Sunyoung Park +7 more
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In this paper, we have proposed an extraction method to find accurate oxide trap locations and energy level in recessed channel structure such as SRCAT. Analytical models for poly depletion effect and the surface potential variation in the cylindrical coordinate were derived and applied to DRAM SRCAT.
Sunyoung Park +7 more
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2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017
In this paper, an improved “hole in the inversion layer” (HIL) model for amplitude of random telegraph noise (RTN) is proposed with a deeper insight into the physical meaning of “hole” radius (key parameter of HIL model). The new physical definition of “hole” radius is well consistent with TCAD simulations for traps at different locations under various
null Zexuan Zhang +4 more
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In this paper, an improved “hole in the inversion layer” (HIL) model for amplitude of random telegraph noise (RTN) is proposed with a deeper insight into the physical meaning of “hole” radius (key parameter of HIL model). The new physical definition of “hole” radius is well consistent with TCAD simulations for traps at different locations under various
null Zexuan Zhang +4 more
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2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
In this paper, the minimum operation voltage (Vmin) shifts of static random access memory (SRAM) induced by random telegraph noises (RTN) are extracted from accurate transient simulation results, including the impacts of both strong and weak coupling RTNs.
Shaofeng Guo +5 more
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In this paper, the minimum operation voltage (Vmin) shifts of static random access memory (SRAM) induced by random telegraph noises (RTN) are extracted from accurate transient simulation results, including the impacts of both strong and weak coupling RTNs.
Shaofeng Guo +5 more
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2019 IEEE 13th International Conference on ASIC (ASICON), 2019
This paper presents the recent advances of our new solution for accurate compact modeling and fast circuit simulation of random telegraph noise (RTN). The model and simulation flow has been implemented in HSPICE using OMI/TMI (CMC open model interface/TSMC model interface). This platform is helpful for the robust circuit design against RTN.
Runsheng Wang +6 more
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This paper presents the recent advances of our new solution for accurate compact modeling and fast circuit simulation of random telegraph noise (RTN). The model and simulation flow has been implemented in HSPICE using OMI/TMI (CMC open model interface/TSMC model interface). This platform is helpful for the robust circuit design against RTN.
Runsheng Wang +6 more
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Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012
We characterized normalized noise power density (S I/I BL 2) and bit-line (BL) current fluctuation (ΔI BL) using traps generated applying cycling stress in 26 nm NAND flash memory. The ΔI BL, S I/I BL 2, and
Bong-Su Jo +7 more
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We characterized normalized noise power density (S I/I BL 2) and bit-line (BL) current fluctuation (ΔI BL) using traps generated applying cycling stress in 26 nm NAND flash memory. The ΔI BL, S I/I BL 2, and
Bong-Su Jo +7 more
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Solid-State Electronics, 2010
Abstract Study of random telegraph noise in gate leakage current ( I g RTN) through thin gate oxide (2.6 nm) as well as drain current random telegraph noise ( I d RTN) has been conducted in MOSFET. RTN having two discrete current levels was observed in gate leakage current.
Heung-Jae Cho +3 more
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Abstract Study of random telegraph noise in gate leakage current ( I g RTN) through thin gate oxide (2.6 nm) as well as drain current random telegraph noise ( I d RTN) has been conducted in MOSFET. RTN having two discrete current levels was observed in gate leakage current.
Heung-Jae Cho +3 more
openaire +1 more source