Results 21 to 30 of about 1,437 (189)

Dual-Point Technique for Multi-Trap RTN Signal Extraction

open access: yesIEEE Access, 2020
Random telegraph noise (RTN), as one dominant variation source in the ultra-scaled devices, has been attracting much more attention, and its analysis is of great importance to understand the fundamental physical mechanisms.
Xuepeng Zhan   +5 more
doaj   +1 more source

A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories

open access: yesMathematics, 2021
A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time.
Juan E. Ruiz-Castro   +3 more
doaj   +1 more source

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

open access: yesApplied Sciences, 2020
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors.
Atabek E. Atamuratov   +5 more
doaj   +1 more source

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

open access: yesSensors, 2017
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper.
Calvin Yi-Ping Chao   +6 more
doaj   +1 more source

On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude

open access: yesIEEE Access, 2021
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs.
Mehzabeen Mehedi   +6 more
doaj   +1 more source

Compute in‐Memory with Non‐Volatile Elements for Neural Networks: A Review from a Co‐Design Perspective

open access: yesAdvanced Materials, Volume 35, Issue 37, September 14, 2023., 2023
Deep learning drives an increasing demand on compute resources. A key operation, matrix‐vector‐multiplication, can potentially be accelerated using cross‐bar interconnects with nodal non‐volatile memory. However, its application today is limited by the properties of the memory elements.
Wilfried Haensch   +6 more
wiley   +1 more source

MoS<sub>2</sub> Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems. [PDF]

open access: yesAdv Sci (Weinh)
Driven by AI computing demands, this study investigates MoS2 channels for 3D NAND Flash to achieve high‐density, low‐power, and reliable nonvolatile memory. MoS2 enables a large memory window and lower operating voltages with low‐k tunneling layer, demonstrating endurance of 10⁴ cycles and retention of 10⁵ s. Comprehensive analyses and machine learning‐
Kim KH   +7 more
europepmc   +2 more sources

Entanglement dynamics in superconducting qubits affected by local bistable impurities [PDF]

open access: yes, 2012
We study the entanglement dynamics for two independent superconducting qubits, each affected by a bistable impurity generating random telegraph noise (RTN) at pure dephasing.
COMPAGNO, Giuseppe   +4 more
core   +1 more source

Integrated Memristor Network for Physiological Signal Processing

open access: yesAdvanced Electronic Materials, Volume 9, Issue 6, June 2023., 2023
Physiological activities are closely related to physical and mental health of human beings. However, due to the variability of each individual and the intrinsic nature of physiological signals, there are many limitations in detecting patients’ physiological problems through counseling diagnosis.
Lei Cai   +7 more
wiley   +1 more source

Variability in Resistive Memories

open access: yesAdvanced Intelligent Systems, Volume 5, Issue 6, June 2023., 2023
A comprehensive review of variability in resistive memories is presented. Experimental evidence of variability for resistive memories is described. Later on, different approaches to model this variability from the physical, behavioral, and stochastic viewpoints are presented.
Juan B. Roldán   +19 more
wiley   +1 more source

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