Results 61 to 70 of about 1,437 (189)

Quantum Size Effect transition in percolating nanocomposite films

, 2000
We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC).
A. B. Pakhomov, A. B. Pakhomov, A. B. Pakhomov, A. B. Pakhomov, A. Carl, A. Carl, A. Carl, A. G. Aronov, A. Millner, B. A. Aronzon, B. Abeles, B. Aronzon, B. Aronzon, B. Aronzon, B. I. Shklovskii, B. I. Shklovskii, B. Raquet, Brouers, C. J. Adkins, C. M. Hurd, D. E. Khmelnitskii, D. J. Bergman, E. Cuevas, E. Meilikhov, E. Z. Meilikhov, G. Deitscher, I. Shlimak, J. H. Hooge, J. H. Scofield, J. Léotin, J. V. Mantese, K. K. Bardhan, K. K. Bardhan, K. K. Likharev, K. S. Ralls, L. M. Lust, M. B. Weissman, M. E. Gershenzon, M. Goiran, N. Nègre, N. Savvides, P. A. Lee, P. Dutta, P. M. Hui, P. Sheng, R. Denton, S. Honda, S. Mitani, S. T. Chui, S. Takahashi, T. Chui, U. N. Nandi, V. F. Gantmaher, V. M. Shalaev, V. Rylkov, X. N. Xing, Y. Koike   +56 more
core   +1 more source

Observation of 1/f 4 Noise in Organic Bilayer Ambipolar FETs and Proposition of Defect Engineering Method for Ultimate Noise Control

Advanced Electronic Materials, Volume 11, Issue 11, July 2025.
The low‐frequency noise in organic bilayer ambipolar transistors is investigated, revealing a unique 1/f⁴ noise from correlated trapping/detrapping and generation/recombination processes. Inserting a thin parylene layer between the n/p junction effectively reduces this excess noise, suggesting a practical approach to enhanced device reliability in ...
Youngmin Han, Jaechan Song, Ryun‐Han Koo, Hocheon Yoo, Wonjun Shin   +4 more
wiley   +1 more source

Decoherence due to telegraph and 1/f noise in Josephson qubits

, 2004
We study decoherence due to random telegraph and 1/f noise in Josephson qubits. We illustrate differences between gaussian and non gaussian effects at different working points and for different protocols.
D'Arrigo, A., Falci, G., Mastellone, A., Paladino, E.   +3 more
core   +1 more source

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon [PDF]

, 2015
Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming.
Baxter R. J., Benjamin F. Bory, Dago M. de Leeuw, Henrique L. Gomes, Paulo R. F. Rocha, Stefan C. J. Meskers   +5 more
core   +3 more sources

Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching

Advanced Electronic Materials, Volume 11, Issue 9, June 2025.
Electrical properties of NbO2‐based memristors are studied and the ability to engineer them for computing applications is explored. By employing noise spectroscopy and by utilizing a dimerization model of insulators, negative differential resistance and inhomogeneous conduction regions are explained.
Nitin Kumar, Jong E. Han, Karsten Beckmann, Nathaniel Cady, G. Sambandamurthy   +4 more
wiley   +1 more source

Dephasing of Si spin qubits due to charge noise

, 2009
Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence.
Culcer, Dimitrie, Hu, Xuedong, Sarma, S. Das   +2 more
core   +1 more source

Telegraph noise effects on two charge-qubits in double quantum dots

, 2013
We analyze theoretically the decoherence of two interacting electrons in a double self-assembled quantum dot due to a random telegraph noise. For this purpose we have examined the pure dephasing rate by evaluating the decoherence factor.
Ayachi, A., Bennaceur, R., Chouikha, W. Ben, Jaziri, S.   +3 more
core   +1 more source

Reliability challenges of gate dielectric materials in transistors

Information &Functional Materials, Volume 2, Issue 1, Page 62-92, March 2025.
We summarize the advantages and challenges of different dielectrics that are applicable to several mainstream channel materials, including Si, SiC, GaN, and 2D materials. The dielectrics materials include oxides such as SiO2, HfO2, and Al2O3 for conventional transistors, as well as fluorides, van der Waals insulators, and Perovskites, which are ...
Ting‐Wei Liu, Zhe Zhao, Ruyue Cao, Yue‐Yang Liu, Xiangwei Jiang   +4 more
wiley   +1 more source

A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications

IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
In this paper, various D flip‐flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Based on these parameters, a few selected DFFs such as C2SFF, conditional‐bridging FF (CBFF)‐S, self‐shut‐off pulsed ...
Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal, Shashikant Patil   +5 more
wiley   +1 more source

Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics

Advanced Electronic Materials, Volume 10, Issue 11, November 2024.
Wafer‐scale deposition of high‐𝜅 gate dielectric on 2D materials is crucial for applications in nano‐electronics, and antimony trioxide (Sb2O3) has shown promising results. It is shown that the choice of contact is critical, as the chemistry at the Sb2O3/contact interface dictates the dielectric performance.
Alok Ranjan, Lunjie Zeng, Eva Olsson
wiley   +1 more source