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Modeling reactive magnetron sputtering: Opportunities and challenges [PDF]
Thin Solid Films, 2019 The complexity of the reactive magnetron sputtering process is demonstrated by four simulation examples. The examples, commonly encountered during the application of this process for thin film deposition, are described by a numerical model for reactive ...
D Depla, K Strijckmans, R Schelfhout
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The mechanism of reactive sputtering
Journal of Materials Science, 1968The reactive sputtering of tantalum in mixed argon/oxygen atmospheres at a total pressure of 3.0×10−4 torr has been investigated by means of measurements on deposition and growth rates, density, electrical properties and electron diffraction. The main controlling factor on all of the parameters was found to be the partial pressure of oxygen.
E. Hollands, D. S. Campbell
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Solar Cells, 1988
Abstract The deposition of CuInSe 2 thin films by co-sputtering from copper and indium planar magnetron sputtering sources in a working gas of argon plus H 2 Se is being investigated. Near-stoichiometric coatings deposited onto glass and molybdenum-coated substrates have been found to have resistivities, Hall mobilities, absorption coefficients ...
John A. Thornton +3 more
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Abstract The deposition of CuInSe 2 thin films by co-sputtering from copper and indium planar magnetron sputtering sources in a working gas of argon plus H 2 Se is being investigated. Near-stoichiometric coatings deposited onto glass and molybdenum-coated substrates have been found to have resistivities, Hall mobilities, absorption coefficients ...
John A. Thornton +3 more
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Thin Solid Films, 1980
Abstract A phenomenological model of reactive sputtering is presented which accounts for changes in the target sputtering rate R and the impinging ion current i T with the reactive gas partial pressure p i . The model was applied to the following two divergent cases: the sputtering of indium in a weakly reactive Ar-N 2 discharge and the ...
A.H. Eltoukhy +3 more
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Abstract A phenomenological model of reactive sputtering is presented which accounts for changes in the target sputtering rate R and the impinging ion current i T with the reactive gas partial pressure p i . The model was applied to the following two divergent cases: the sputtering of indium in a weakly reactive Ar-N 2 discharge and the ...
A.H. Eltoukhy +3 more
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Reactive sputtering of copper and silicon near the sputtering threshold
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985We have investigated reactive sputtering of copper and silicon by oxygen in the ion energy regime near the sputtering threshold, using low-energy ion-beam and quartz-crystal microbalance techniques. Surface oxidation is observed to increase the ion energy threshold for copper sputtering, and oxide film growth by low-energy ion bombardment of copper and
T. M. Mayer +2 more
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Properties of Reactive Sputtered Alumina-Silica Mixtures
Optical Interference Coatings, 2013Standard antireflective coatings applied to hard substrates like sapphire suffer from poor abrasion resistance. Silica is used as low refractive index layer in many multilayer systems although it has a lower hardness than the substrate. In this work an attempt was made to enhance the hardness by the addition of alumina. Magnetron sputtering was used in
Stefan Bruns +3 more
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Reactive magnetron sputtering of ZnO
Journal of Applied Physics, 1981A planar magnetron with a zinc target is used to sputter zinc oxide in an oxygen atmosphere. Highly oriented zinc oxide films are obtained on a variety of subtrates such as gold, aluminum, platinum, quartz, and oxidized silicon. The sputtering rate is typically 10–20 μm/h for a substrate temperature of 450–500 °C, a substrate-to-target spacing of 4–7 ...
B. T. Khuri-Yakub +2 more
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A model for reactive magnetron sputtering
Vacuum, 1992Abstract A steady-state model for the reactive sputtering process in a symmetrical planar magnetron configuration is presented which takes the specific system geometry into consideration. Further to the simulation of the well-known hysteresis effect and its consequences in the composition of the deposited film, the model allows for the calculation of
C.D. Tsiogas, J.N. Avaritsiotis
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Reactive sputtering with an unbalanced magnetron
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992An unbalanced magnetron uses changes in the configuration of the magnetic field, which confines the plasma close to the sputtering cathode, to allow some of it to ‘‘leak’’ out to impinge on the substrate. An isolated or insulating substrate will acquire a negative bias and be subject to an ion bombardment at that potential. The creation of biases of up
R. P. Howson, H. A. Ja’fer
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2008
Simulation of the Sputtering Process.- Electron Emission from Surfaces Induced by Slow Ions and Atoms.- Modeling of the Magnetron Discharge.- Modelling of Reactive Sputtering Processes.- Depositing Aluminium Oxide: A Case Study of Reactive Magnetron Sputtering.- Transport of Sputtered Particles Through the Gas Phase.- Energy Deposition at the Substrate
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Simulation of the Sputtering Process.- Electron Emission from Surfaces Induced by Slow Ions and Atoms.- Modeling of the Magnetron Discharge.- Modelling of Reactive Sputtering Processes.- Depositing Aluminium Oxide: A Case Study of Reactive Magnetron Sputtering.- Transport of Sputtered Particles Through the Gas Phase.- Energy Deposition at the Substrate
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