Results 261 to 270 of about 22,223 (308)

Synthesis of AlN by reactive sputtering

Materials Science and Engineering: B, 1997
Abstract We present a systematic study of the sub-band gap optical absorption coefficients α (h ν ) in the range 1.2–6 eV vs. deposition-temperature ( T s from 27 to 450°C) films deposited on silica by 13.6 MHz magnetron sputtering of an Al target with 53 and 72% N 2 in the reactive mixture.
F Randriamora, J.C Bruyère, A Deneuville   +2 more
openaire   +1 more source

Reactive sputtering of titanium boride

Thin Solid Films, 1989
Abstract The process of reactive sputtering of titanium boride in a diborane-argon mixture has been studied. The influence of r.f. power and mass flow of reactive gas has been investigated. The decomposition and consumption of the process gas has been studied by mass spectrometry.
T. Larsson, H.-O. Blom, S. Berg, M. Östling   +3 more
openaire   +1 more source

Modeling of multicomponent reactive sputtering

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991
Computer process modeling has become an important tool in the development of new thin-film processes. Previously, we presented a model that successfully describes the complex behavior of the reactive sputtering of a single-element target. The model enables one to predict, e.g., the hysteresis effect and the composition of the deposited film.
M. Moradi, C. Nender, S. Berg, H-O. Blom, A. Belkind, Z. Orban   +5 more
openaire   +1 more source

Simulation of Reactive Sputtering. Review

LETI Transactions on Electrical Engineering & Computer Science, 2023
This paper takes a critical look at the evolution of reactive sputtering modeling over the past 50 years. The review summarizes the main regularities of the processes of film deposition of simple metal compounds (nitrides, oxides, oxynitrides, carbides, etc.) discovered experimentally by various researchers.
openaire   +1 more source

Computational model of reactive sputtering

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1993
The model of reactive sputtering is modified to contain only measurable integral characteristics such as total current, discharge power, target erosion rate and volt–ampere characteristics for sputtering in metallic and reactive modes. Calculation results for Zn/ZnO and Zr/ZrN are in good agreement with experimental data.
V. A. Koss, I. V. Ioffe, A. Belkind
openaire   +1 more source

Modeling of the Reactive Sputtering Process

2018
Manually operated coating processes are becoming quite rare in modern material fabrication. Sputtering is an example of a widely used industrial thin film coating process. This chapter outlines a simple model for the basic reactive sputtering process referred to as 'Berg's model', first suggested 1987 by S. erg and his co-workers at Uppsala University.
S Berg, T Nyberg, H-O Blom, C Nender
openaire   +1 more source

Practical in-line reactive sputtering

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1987
This paper presents an overview study of oxide and nitride films produced by reactive dc magnetron sputtering of metallic targets in oxygen–argon and nitrogen–argon atmospheres, using production in-line equipment. The metals investigated are tungsten, titanium, tantalum, nickel, and aluminum.
Robert G. Johanson, William G. Carruthers   +1 more
openaire   +1 more source

Mechanisms of voltage controlled reactive sputtering and physical properties of reactively sputtered cermet films

2010
This thesis deals with the mechanisms involved in reactively sputtering a metal target in an Inert/reactive gas glow discharge and with the electrical transport and optical properties of A1/A1N granular metal (or cermet) films produced by this technique. Experiments are described in which an A1 target is sputtered in Ar/N₂ and Ar/O₂ atmospheres.
openaire   +1 more source

Reactive sputtering of manganese and titanium

Thin Solid Films, 1968
Abstract Manganese and titanium have been sputtered together in oxygen. Amorphous films were only formed in a narrow region of composition near 3% Mn to Ti where permittivities were near 20 and losses a few percent. Other compositional regions gave crystalline films with losses up to 17% and permittivities up to 120.
P.J. Harrop, G. Oakley, D.S. Campbell
openaire   +1 more source

Reactive sputtering of RuO2 films

Thin Solid Films, 1989
Abstract The growth rate, resistivity and intrinsic stress of RuO 2 films deposited by reactive sputtering with an O 2 Ne or an O 2 Ar gas mixture were investigated as a function of the following sputtering parameters: gas composition, gas pressure, sputtering power and substrate bias.
E. Kolawa, F.C.T. So, W. Flick, X.-A. Zhao, E.T-S. Pan, M-A. Nicolet   +5 more
openaire   +1 more source