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A model for reactive sputtering with magnetrons
Vacuum, 1989Abstract Reactive sputtering of nitrides and oxides are used to produce compound thin films. Recently presented models, for small amounts of reactive gas (
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Reactivity and Structure of Sputtered Species
1986A high-pressure, fast-atom bombardment (FAB) ion source has been constructed [1] to study ion/molecule reactions of sputtered ions and neutrals. Pressures in this ion source are typically on the order of 0.1 to 0.5 Torr. Studies of metal cluster ion chemistry have been performed using this chemical ionization/fast-atom bombardment (CI/FAB) source with ...
R. B. Freas, J. E. Campana
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Simulation of Reactive Sputtering. Fundamentals
LETI Transactions on Electrical Engineering & Computer ScienceThis work aims to describe the fundamental principles whose application for the purposes of modelling various physical and chemical processes has proven to be effective. The model of a process is defined as its representation using another similar (or identical) process, constructed based on a number of simplifying assumptions. Such a representation is
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The mechanism of d.c. reactive sputtering
Thin Solid Films, 1981B. Goranchev, I. Petrov, V. Orlinov
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Reactive sputtering of TiC with oxygen
Thin Solid Films, 1975William D. Sproul, March H. Richman
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Reactively Sputtered Oxide Films
Journal of The Electrochemical Society, 1969M. L Lieberman, K. C. Medrud
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