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Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 Conductive-Bridging-RAMs and HfO2 Oxide-RAMs
2010 Gonon, P., Vallée, Corentin, Jousseaume, V., Bernard, Y., Mannequin, C., Mougenot, M., Grampeix, H. +6 moreopenaire +2 more sources