Results 71 to 80 of about 1,751 (142)

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

Advanced Functional Materials, Volume 35, Issue 37, September 11, 2025.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong, Ching Shih, Guan‐Long Chen, Yu‐Chen Hsin, Chen‐Yu Yang, Hsin‐Han Lee, Kuan‐Ming Chen, Yu‐Ho Kao, Tsai‐Yu Wu, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +22 more
wiley   +1 more source

Training and Operation of an Integrated Neuromorphic Network Based on Metal-Oxide Memristors

, 2014
Despite all the progress of semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging.
Adam, Gina, Hoskins, Brian, Likharev, Konstantin K., Merrikh-Bayat, Farnood, Prezioso, Mirko, Strukov, Dmitri B.   +5 more
core   +1 more source

An FPGA-based instrument for en-masse RRAM characterization with ns pulsing resolution

An FPGA-based instrument with capabilities of on-board oscilloscope and nanoscale pulsing (70 ns @ \pm 10 V) is presented, thus allowing exploration of the nano-scale switching of RRAM devices.
Berdan, Radu, Khiat, Ali, Prodromakis, Themis, Serb, Alexander, Xing, Jinling, Xu, Hui   +5 more
core   +1 more source

The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO_x/W Bilayer-Structured Memory Device. [PDF]

Nanomaterials (Basel), 2023
Noh M, Ju D, Cho S, Kim S.
europepmc   +1 more source

Double-Forming Mechanism of TaO_x-Based Resistive Memory Device and Its Synaptic Applications. [PDF]

Materials (Basel), 2023
Ju D, Kim S, Lee S, Kim S.
europepmc   +1 more source

Graphene-based RRAM devices for neural computing. [PDF]

Front Neurosci, 2023
R RT, Das RR, Reghuvaran C, James A.
europepmc   +1 more source

Effects of Interface Oxidation on Noise Properties and Performance in III-V Vertical Nanowire Memristors. [PDF]

ACS Appl Mater Interfaces, 2023
Saketh Ram M, Svensson J, Wernersson LE.
europepmc   +1 more source

Overview of emerging nonvolatile memory technologies [PDF]

, 2014

core   +1 more source

Effect of Hydrogen Annealing on Performances of BN-Based RRAM. [PDF]

Nanomaterials (Basel), 2023
Lee D, Kim HD.
europepmc   +1 more source

Investigation of Different Oxygen Partial Pressures on MgGa₂O₄-Resistive Random-Access Memory. [PDF]

ACS Omega, 2023
Kao YN, Huang WL, Chang SP, Lai WC, Chang SJ.   +4 more
europepmc   +1 more source