Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory [PDF]
Molecules, 2021 We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid ...
Jin Mo Kim, Sung Won Hwang
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Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network [PDF]
Sensors, 2023 Memristors mimic synaptic functions in advanced electronics and image sensors, thereby enabling brain-inspired neuromorphic computing to overcome the limitations of the von Neumann architecture.
Hyunho Seok +4 more
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On the Thermal Models for Resistive Random Access Memory Circuit Simulation [PDF]
Nanomaterials, 2021 Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware ...
Juan B. Roldán +13 more
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Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory [PDF]
Nanomaterials, 2020 In this study, we investigated the synaptic functions of TiN/Ti/TiO2/SiOx/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture.
Hyojong Cho, Sungjun Kim
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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory [PDF]
Nanoscale Research Letters, 2019 Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding +4 more
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Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory [PDF]
Micromachines, 2020 In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao +5 more
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A Collective Study on Modeling and Simulation of Resistive Random Access Memory [PDF]
Nanoscale Research Letters, 2018 In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working ...
Debashis Panda +2 more
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Recent Advances in Flexible Resistive Random Access Memory
Applied System Innovation, 2022 Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Peng Tang +9 more
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Overview of radiation effects on emerging non-volatile memory technologies [PDF]
Nuclear Technology and Radiation Protection, 2017 In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S. +3 more
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Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory
Materials Research Express, 2021 In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs.
Kyoungdu Kim +8 more
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