Results 1 to 10 of about 4,425 (277)

Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network [PDF]

open access: goldSensors, 2023
Memristors mimic synaptic functions in advanced electronics and image sensors, thereby enabling brain-inspired neuromorphic computing to overcome the limitations of the von Neumann architecture.
Hyunho Seok   +4 more
doaj   +4 more sources

Conductance Quantization in Resistive Random Access Memory. [PDF]

open access: goldNanoscale Res Lett, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory.
Li Y   +8 more
europepmc   +10 more sources

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory [PDF]

open access: goldMicromachines, 2020
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao   +5 more
doaj   +4 more sources

Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory [PDF]

open access: yesMolecules, 2021
We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid ...
Jin Mo Kim, Sung Won Hwang
doaj   +2 more sources

A compute-in-memory chip based on resistive random-access memory. [PDF]

open access: yesNature, 2022
AbstractRealizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM)1promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by ...
Wan W   +13 more
europepmc   +5 more sources

On the Thermal Models for Resistive Random Access Memory Circuit Simulation [PDF]

open access: yesNanomaterials, 2021
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware ...
Juan B. Roldán   +13 more
doaj   +2 more sources

Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory [PDF]

open access: yesNanomaterials, 2020
In this study, we investigated the synaptic functions of TiN/Ti/TiO2/SiOx/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture.
Hyojong Cho, Sungjun Kim
doaj   +2 more sources

Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]

open access: yesAdvanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi   +3 more
doaj   +2 more sources

Recent Advances in Flexible Resistive Random Access Memory

open access: yesApplied System Innovation, 2022
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Peng Tang   +9 more
doaj   +2 more sources

All Nonmetal Resistive Random Access Memory. [PDF]

open access: yesSci Rep, 2019
AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen TJ   +4 more
europepmc   +4 more sources

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