Results 101 to 110 of about 4,425 (277)

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing. [PDF]

Discov Nano, 2023
Zahoor F, Hussin FA, Isyaku UB, Gupta S, Khanday FA, Chattopadhyay A, Abbas H.   +6 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

A graphene integrated highly transparent resistive switching memory device

APL Materials, 2018
We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the ...
Sita Dugu, Shojan P. Pavunny, Tej B. Limbu, Brad R. Weiner, Gerardo Morell, Ram S. Katiyar   +5 more
doaj   +1 more source

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory

, 2022
Soo‐Min Jin, Hea‐Jee Kim, Dae‐Seong Woo, Sung-mok Jung, Dong‐Eon Kim, Tae‐Hun Shim, Jea‐Gun Park   +6 more
openalex   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory. [PDF]

Materials (Basel), 2022
Chung H, Shin H, Park J, Sun W.
europepmc   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Investigation of Different Oxygen Partial Pressures on MgGa₂O₄-Resistive Random-Access Memory. [PDF]

ACS Omega, 2023
Kao YN, Huang WL, Chang SP, Lai WC, Chang SJ.   +4 more
europepmc   +1 more source

Novel Functional Materials via 3D Printing by Vat Photopolymerization

Advanced Functional Materials, EarlyView.
This Perspective systematically analyzes strategies for incorporating functionalities into 3D‐printed materials via Vat Photopolymerization (VP). It explores the spectrum of achievable functionalities in recently reported novel materials—such as conductive, energy‐storing, biodegradable, stimuli‐responsive, self‐healing, shape‐memory, biomaterials, and
Sergey S. Nechausov, Patrick Fesser, Boris A. Bulgakov, Ulrich S. Schubert   +3 more
wiley   +1 more source

Structural analysis of anodic porous alumina used for resistive random access memory

Science and Technology of Advanced Materials, 2010
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect.
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
doaj