Results 11 to 20 of about 3,312 (212)
IEEE Access, 2021 Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku +4 more
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Research progress in flexible resistive random access memory materials
Cailiao gongcheng, 2020 The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu +9 more
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Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
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Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
Nanomaterials, 2021 Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil +6 more
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Stretchable and Wearable Resistive Switching Random‐Access Memory
Advanced Intelligent Systems, 2020 In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi +3 more
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Optimal Weight‐Splitting in Resistive Random Access Memory‐Based Computing‐in‐Memory Macros
Advanced Intelligent Systems, 2023 Computing‐in‐memory (CIM) is considered a feasible solution to the acceleration of multiply‐accumulate (MAC) operations at low power. The key to CIM is parallel MAC operations in the memory domain, and thus reductions in power consumption and memory ...
Choongseok Song +2 more
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Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning
Journal of Science: Advanced Materials and Devices, 2023 Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing.
Shubham V. Patil +9 more
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Materials Research Express, 2022 We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park +4 more
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Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]
PLoS ONE, 2016 Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo +1 more
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Glucose-based resistive random access memory for transient electronics
Journal of Information Display, 2019 In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park +3 more
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