Results 41 to 50 of about 3,312 (212)

Reversible electrical percolation in a stretchable and self-healable silver-gradient nanocomposite bilayer

Nature Communications, 2022
Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access
Jinhong Park, Duhwan Seong, Yong Jun Park, Sang Hyeok Park, Hyunjin Jung, Yewon Kim, Hyoung Won Baac, Mikyung Shin, Seunghyun Lee, Minbaek Lee, Donghee Son   +10 more
doaj   +1 more source

Piezoresistive Monitoring of Carbon Nanomaterial‐Reinforced Epoxy Composites Under Cyclic and Fatigue Loading: A Review

Advanced Engineering Materials, EarlyView.
Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente, J. Nunes‐Pereira, A. P. Silva, P. N. B. Reis   +3 more
wiley   +1 more source

A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks

Advanced Intelligent Systems, 2023
Resistive switching devices are candidates to be used as weight for the future hardware realization of neuronal networks. Herein, these resistive switches base on oxygen vacancy migration and can be toggled between different resistance states.
Carsten Funck, Stefan Wiefels, Christopher Bengel, Kristoffer Schnieders, Susanne Hoffmann-Eifert, Regina Dittmann, Stephan Menzel   +6 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Smart, Bio‐Inspired Polymers and Bio‐Based Molecules Modified by Zwitterionic Motifs to Design Next‐Generation Materials for Medical Applications

Advanced Functional Materials, EarlyView.
Bio‐based and (semi‐)synthetic zwitterion‐modified novel materials and fully synthetic next‐generation alternatives show the importance of material design for different biomedical applications. The zwitterionic character affects the physiochemical behavior of the material and deepens the understanding of chemical interaction mechanisms within the ...
Theresa M. Lutz, Jonas De Breuck, Sahar Salehi, Meike N. Leiske   +3 more
wiley   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Programmable DNA‐Peptide Hybrid Nanostructures for Potent Neutralization of Multiple Influenza a Virus Subtypes

Advanced Functional Materials, EarlyView.
A multivalent antiviral platform based on honeycomb‐shaped DNA nanostructures (HC–Urumin) is developed to enhance the potency and breadth of the host defense peptide Urumin. Through spatially patterned trimeric presentation, HC–Urumin disrupts influenza A virus entry, improves cell viability, and reduces disease severity in vivo‐offering a modular and ...
Saurabh Umrao, Abhisek Dwivedy, Payton L. Haak, Dhanush Gandavadi, Laurie A. Rund, Chi Chen, Vineetha Mareddy, Lifeng Zhou, Jinwei Duan, Ying Fang, Andrew J. Steelman, Xing Wang   +11 more
wiley   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Advanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker, Yoonsang Park, Kihong Kim, Ji Soo Kim, Nives Strkalj, Atif Jan, Giuliana Di Martino, Benson K. Tsai, Haiyan Wang, Ping Lu, Duk‐Hyun Choe, Judith L. MacManus‐Driscoll   +11 more
wiley   +1 more source

Convolutional kernel with PrCaMnOx-based resistive random-access memory for neuromorphic image processing

AIP Advances, 2023
This paper investigated the conductance-state stability of TiN/PrCaMnOx (PCMO)-based resistive random-access memory (RRAM), which serves as a kernel weight element in convolutional neural networks (CNNs), to realize accurate feature extraction from ...
Eunryeong Hong, Seonuk Jeon, Nayeon Kim, Hyun Wook Kim, Heebum Kang, Kibong Moon, Jiyong Woo   +6 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source