Results 51 to 60 of about 3,312 (212)
A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process
Nanoscale Research Letters, 2017 This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu +4 more
doaj +1 more source
Bio‐Inspired Molecular Events in Poly(Ionic Liquids)
Advanced Functional Materials, EarlyView.Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley +1 more source
Advanced Functional Materials, EarlyView.Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim +3 more
wiley +1 more source
Low-power resistive random access memory by confining the formation of conducting filaments
AIP Advances, 2016 Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source
Quantum Dots for Resistive Switching Memory and Artificial Synapse
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
doaj +1 more source
Multistate resistive switching in silver nanoparticle films
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +1 more source
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, EarlyView.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory
IEEE Access, 2019 In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O2 gas flow was carefully controlled by different oxygen concentration to obtain proper Ga2O3 film.
Chih-Chiang Yang +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun +7 more
wiley +1 more source