Results 101 to 110 of about 30,168 (284)

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source

Stoichiometry and volume dependent transport in lithium ion memristive devices

AIP Advances, 2018
LixCoO2, a thoroughly studied cathode material used extensively in Li-ion rechargeable batteries, has recently been proposed as a potential candidate for resistive random access memory and neuromorphic system applications.
Charis M. Orfanidou, Panagiotis S. Ioannou, Evripides Kyriakides, Christiana Nicolaou, Cristian N. Mihailescu, Van Son Nguyen, Van Huy Mai, Olivier Schneegans, John Giapintzakis   +8 more
doaj   +1 more source

The Impact of On-chip Communication on Memory Technologies for Neuromorphic Systems

, 2018
Emergent nanoscale non-volatile memory technologies with high integration density offer a promising solution to overcome the scalability limitations of CMOS-based neural networks architectures, by efficiently exhibiting the key principle of neural ...
Manohar, Rajit, Moradi, Saber
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals [PDF]

Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM ...
Chai, Z, Govoreanu, B, Ji, Z, Jurczak, M, Ma, J, Zhang, JF, Zhang, WD   +6 more
core   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout

IEEE Open Journal of Nanotechnology
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct ...
Roopesh Singh, Shivam Verma
doaj   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

FPSA: A Full System Stack Solution for Reconfigurable ReRAM-based NN Accelerator Architecture

, 2019
Neural Network (NN) accelerators with emerging ReRAM (resistive random access memory) technologies have been investigated as one of the promising solutions to address the \textit{memory wall} challenge, due to the unique capability of \textit{processing ...
Hu, Xing, Ji, Yu, Li, Shuangchen, Wang, Peiqi, Xie, Xinfeng, Xie, Yuan, Zhang, Youhui, Zhang, Youyang   +7 more
core   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source