Results 101 to 110 of about 62,185 (316)

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Advanced Electronic Materials, 2019
A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11 1¯ ) is grown onto a c‐cut Al2O3‐substrate to target the role of grain boundaries in resistive switching.
S. Petzold, A. Zintler, R. Eilhardt, E. Piros, N. Kaiser, S. U. Sharath, T. Vogel, M. Major, K. McKenna, L. Molina‐Luna, L. Alff   +10 more
semanticscholar   +1 more source

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

Advanced Functional Materials, EarlyView.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus, Dávid Beke, Lili Vajtai, András Jánossy, László Forró, Ferenc Simon   +5 more
wiley   +1 more source

A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process

Nanoscale Research Letters, 2017
This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application.
Meng-Yin Hsu, Chu-Feng Liao, Yi-Hong Shih, Chrong Jung Lin, Ya-Chin King   +4 more
doaj   +1 more source

Thermal reversible breakdown and resistivityswitching in hafnium dioxide [PDF]

, 2011
HfO2 nanostructures are currently considered to be very promising for different applications including gate oxides in Si transistors and emerging nonvolatile memory cells such as resistive random access memory (RRAM).
Borisenko, V.E., Danilyuk, A.L., Danilyuk, M.A., Kin-Leong Pey, Migas, D.B., Raghavan Naga, Xing Wu   +6 more
core   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Interface-Driven Multifunctionality in Two-Dimensional TiO2 Nanosheet/Poly(Dimercaptothiadiazole-Triazine) Hybrid Resistive Random Access Memory Device.

ACS Applied Materials and Interfaces, 2020
Interface-driven multifunctional facets are gearing up in the field of science and technology. Here, we present the interface-activated resistive switching (RS), negative differential resistance, diode behavior, and ultraviolet (UV) light sensing in ...
A. Kumari, Shobith M Shanbogh, Iranna Udachyan, Sakthivel Kandaiah, Amit Roy, Vaibhav Varade, Anjaneyulu Ponnam   +6 more
semanticscholar   +1 more source

Programmable DNA‐Peptide Hybrid Nanostructures for Potent Neutralization of Multiple Influenza a Virus Subtypes

Advanced Functional Materials, EarlyView.
A multivalent antiviral platform based on honeycomb‐shaped DNA nanostructures (HC–Urumin) is developed to enhance the potency and breadth of the host defense peptide Urumin. Through spatially patterned trimeric presentation, HC–Urumin disrupts influenza A virus entry, improves cell viability, and reduces disease severity in vivo‐offering a modular and ...
Saurabh Umrao, Abhisek Dwivedy, Payton L. Haak, Dhanush Gandavadi, Laurie A. Rund, Chi Chen, Vineetha Mareddy, Lifeng Zhou, Jinwei Duan, Ying Fang, Andrew J. Steelman, Xing Wang   +11 more
wiley   +1 more source

Electroactive Liquid Crystal Elastomers as Soft Actuators

Advanced Functional Materials, EarlyView.
Electroactive liquid crystal elastomers (eLCEs) can be actuated via electromechanical, electrochemical, or electrothermal effects. a) Electromechanical effects include Maxwell stress, electrostriction, and the electroclinic effect. b) Electrochemical effects arise from electrode redox reactions.
Yakui Deng, Min‐Hui Li
wiley   +1 more source

Quantum Dots for Resistive Switching Memory and Artificial Synapse

Nanomaterials
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim   +2 more
doaj   +1 more source

Duality between erasures and defects

, 2016
We investigate the duality of the binary erasure channel (BEC) and the binary defect channel (BDC). This duality holds for channel capacities, capacity achieving schemes, minimum distances, and upper bounds on the probability of failure to retrieve the ...
Kim, Yongjune, Kumar, B. V. K. Vijaya
core   +1 more source