Results 111 to 120 of about 30,168 (284)

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

AIP Advances, 2017
A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory.
R. Aluguri, D. Kumar, F. M. Simanjuntak, T.-Y. Tseng   +3 more
doaj   +1 more source

Novel Functional Materials via 3D Printing by Vat Photopolymerization

Advanced Functional Materials, EarlyView.
This Perspective systematically analyzes strategies for incorporating functionalities into 3D‐printed materials via Vat Photopolymerization (VP). It explores the spectrum of achievable functionalities in recently reported novel materials—such as conductive, energy‐storing, biodegradable, stimuli‐responsive, self‐healing, shape‐memory, biomaterials, and
Sergey S. Nechausov, Patrick Fesser, Boris A. Bulgakov, Ulrich S. Schubert   +3 more
wiley   +1 more source

s‐Orbital Mediated Metavalent Bonding Enables State‐Of‐The‐Art n‐Type AgBiSe2 Thermoelectrics

Advanced Functional Materials, EarlyView.
Metavalent bonding (MVB) underpins the exceptional property portfolio of chalcogenides. Typical MVB solids are mainly found in p‐bonded systems. This work reveals that MVB can also be formed with s‐p orbital interactions upon forming a single‐electron σ‐bond, as exemplified in AgBiSe2.
Binrong Huang, Dasol Kim, Yuan Yu, Jinxuan Zhong, Jianbo Zhu, Yaoling Shen, Yu Guo, Moran Wang, Jiawei Huang, Tu Lyu, Nan Lin, Yongsheng Zhang, Matthias Wuttig, Lipeng Hu   +13 more
wiley   +1 more source

A hardware Markov chain algorithm realized in a single device for machine learning

Nature Communications, 2018
Despite the need to develop resistive random access memory (RRAM) devices for machine learning, RRAM array-based hardware methods for algorithm require external electronics.
He Tian, Xue-Feng Wang, Mohammad Ali Mohammad, Guang-Yang Gou, Fan Wu, Yi Yang, Tian-Ling Ren   +6 more
doaj   +1 more source

A data-driven Verilog-A ReRam model

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic yet computationally efficient device models.
Khiat, Ali, Messaris, Ioannis, Nikolaidis, Spyridon, Prodromakis, Themis, Serb, Alexander   +4 more
core   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature Communications, 2019
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al.
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini   +7 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Physical unclonable in-memory computing for simultaneous protecting private data and deep learning models

Nature Communications
Compute-in-memory based on resistive random-access memory has emerged as a promising technology for accelerating neural networks on edge devices. It can reduce frequent data transfers and improve energy efficiency.
Wenshuo Yue, Kai Wu, Zhiyuan Li, Juchen Zhou, Zeyu Wang, Teng Zhang, Yuxiang Yang, Lintao Ye, Yongqin Wu, Weihai Bu, Shaozhi Wang, Xiaodong He, Xiaobing Yan, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang   +16 more
doaj   +1 more source

Meniscus Pixel Printing for Contact‐Lens Vision Sensing and Robotic Control

Advanced Functional Materials, EarlyView.
A visual‐sensing contact lens is enabled by meniscus pixel printing (MPP), which rapidly patterns a 200 µm perovskite photodetector pixel in 1 s without masks, vacuum processing, or bulky equipment. A deep‐learning‐based super‐resolution reconstructs sparse on‐lens signals into 80 × 80 high‐resolution visual information, while AI‐driven eye‐tracking ...
Byung‐Hoon Gong, Dohyean Kim, Jiyun Jeong, Taekyeong Kim, Soon‐sung Kwon, Junyoung Seo, Il Jeon, Im Doo Jung   +7 more
wiley   +1 more source