Results 111 to 120 of about 62,185 (316)

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Low-power resistive random access memory by confining the formation of conducting filaments

AIP Advances, 2016
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang, Tzu-Hsien Shen, Lan-Hsuan Lee, Cheng-Yen Wen, Si-Chen Lee   +4 more
doaj   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Effect of Oxygen Concentration Ratio on a Ga₂O₃-Based Resistive Random Access Memory

IEEE Access, 2019
In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O2 gas flow was carefully controlled by different oxygen concentration to obtain proper Ga2O3 film.
Chih-Chiang Yang, Jin-Quan Huang, Kuan-Yu Chen, Pei-Hsuan Chiu, Hoang-Tuan Vu, Yan-Kuin Su   +5 more
doaj   +1 more source

The Impact of On-chip Communication on Memory Technologies for Neuromorphic Systems

, 2018
Emergent nanoscale non-volatile memory technologies with high integration density offer a promising solution to overcome the scalability limitations of CMOS-based neural networks architectures, by efficiently exhibiting the key principle of neural ...
Manohar, Rajit, Moradi, Saber
core   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Smarter Sensors Through Machine Learning: Historical Insights and Emerging Trends across Sensor Technologies

Advanced Functional Materials, EarlyView.
This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee, Osman Gul, Yeongjae Kwon, Jaeseok Jeong, Seokjoo Cho, Jihyeon Ahn, Jehee Yu, Cheolmin Kim, Donho Lee, Hyeonseok Han, Byeongju Lee, Jungrak Choi, Ji‐Hwan Ha, Yongrok Jeong, Kyungnam Kang, Ali Javey, Junseong Ahn, Inkyu Park   +17 more
wiley   +1 more source

Stoichiometry and volume dependent transport in lithium ion memristive devices

AIP Advances, 2018
LixCoO2, a thoroughly studied cathode material used extensively in Li-ion rechargeable batteries, has recently been proposed as a potential candidate for resistive random access memory and neuromorphic system applications.
Charis M. Orfanidou, Panagiotis S. Ioannou, Evripides Kyriakides, Christiana Nicolaou, Cristian N. Mihailescu, Van Son Nguyen, Van Huy Mai, Olivier Schneegans, John Giapintzakis   +8 more
doaj   +1 more source

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

, 2015
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task.
Guo, Zhonglu, Sun, Zhimei, Zhou, Jian, Zhu, Linggang   +3 more
core   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source