Results 11 to 20 of about 30,168 (284)

Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]

Advanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi, Jiangxin Wang, Izzat Aziz, Pooi See Lee   +3 more
doaj   +2 more sources

All Nonmetal Resistive Random Access Memory. [PDF]

Sci Rep, 2019
AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen TJ, Gismatulin A, Volodin V, Gritsenko V, Chin A.   +4 more
europepmc   +4 more sources

Conductance Quantization in Resistive Random Access Memory. [PDF]

Nanoscale Res Lett, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory.
Li Y, Long S, Liu Y, Hu C, Teng J, Liu Q, Lv H, Suñé J, Liu M.   +8 more
europepmc   +8 more sources

Overview of radiation effects on emerging non-volatile memory technologies [PDF]

Nuclear Technology and Radiation Protection, 2017
In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S., Dolićanin Edin, Lazarević Đorđe R., Lončar Boris B.   +3 more
doaj   +1 more source

In Memory Energy Application for Resistive Random Access Memory

Advanced Electronic Materials, 2021
AbstractThis work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next‐generation memory, thanks to its promising performances in terms of scalability and CMOS process ...
Trotti, Paola, Oukassi, Sami, Molas, Gabriel, Bernard, Mathieu, Aussenac, François, Pillonnet, Gaël   +5 more
openaire   +2 more sources

Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

Materials Research Express, 2021
In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs.
Kyoungdu Kim, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang, Jaewon Jang   +8 more
doaj   +1 more source

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

IEEE Access, 2021
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku, Mohd Haris Bin Md Khir, I. Md Nawi, M. A. Zakariya, Furqan Zahoor   +4 more
doaj   +1 more source

Research progress in flexible resistive random access memory materials

Cailiao gongcheng, 2020
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei   +9 more
doaj   +1 more source

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Nanomaterials, 2021
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim   +6 more
doaj   +1 more source

A ZnTaOx Based Resistive Switching Random Access Memory [PDF]

ECS Solid State Letters, 2014
The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of
Zheng, K., Zhao, J. L., Leck, K. S., Teo, K. L., Yeo, E. G., Sun, X. W.   +5 more
openaire   +1 more source