Results 11 to 20 of about 62,185 (316)
Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory
Materials Research Express, 2021 In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs.
Kyoungdu Kim +8 more
doaj +2 more sources
IEEE Access, 2021 Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku +4 more
doaj +2 more sources
Multistate resistive switching in silver nanoparticle films [PDF]
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
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In Memory Energy Application for Resistive Random Access Memory
Advanced Electronic Materials, 2021 This work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage.
Paola Trotti +5 more
semanticscholar +3 more sources
Spinel ferrites for resistive random access memory applications
Emergent Materials, 2023 Cutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries.
Ketankumar Gayakvad +5 more
semanticscholar +2 more sources
Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]
Advanced Intelligent Systems, 2020 In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi +3 more
doaj +2 more sources
npj Computational Materials, 2020 Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer.
Kena Zhang +5 more
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Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory [PDF]
Micromachines, 2020 In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao +5 more
doaj +2 more sources
High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence. [PDF]
Sci Rep, 2020 All-nonmetal resistive random access memory (RRAM) with a N+–Si/SiNx/P+–Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated ...
Yen TJ, Chin A, Gritsenko V.
europepmc +2 more sources
Recent advances in resistive random access memory based on lead halide perovskite
InfoMat, 2021 Lead halide perovskites have attracted increasing attention in photovoltaic devices, light‐emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the
Jiayu Di +5 more
doaj +2 more sources