Results 241 to 250 of about 30,239 (285)

Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Yi-Ying Liao, Pang-Shiu Chen, Shyh-Shyuan Sheu, Pi-Feng Chiu, Wen-Ping Lin, Chih-He Lin, Ming-Jinn Tsai, Tzu-Kun Ku   +14 more
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GMRAM: giant magneto-resistance random-access memory

2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484), 2002
Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used
R.R. Katti, H. Kaakani
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Novel graphene-based resistive random access memory

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced.
null Yu-Tao Li, null Hai-Ming Zhao, null He Tian, null Xue-Feng Wang, null Wen-Tian Mi, null Yi Yang, null Tian-Ling Ren   +6 more
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Halide perovskites for resistive random-access memories

Journal of Materials Chemistry C, 2019
Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.
Hyojung Kim, Ji Su Han, Sun Gil Kim, Soo Young Kim, Ho Won Jang   +4 more
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Selector Failure Detection for Resistive Random Access Memories

2021 IEEE International Symposium on Information Theory (ISIT), 2021
The sneak path (SP) interference problem in resistive random access memory (ReRAM) severely affects the data storage reliability. Recent works showed that the occurrence of the SP is highly related to the selector failures (SFs) in the resistive memory arrays.
Guanghui Song, Kui Cai, Ce Sun, Xingwei Zhong, Jun Cheng   +4 more
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Bio-Organic Based Resistive Switching Random-Access Memory

Solid State Phenomena, 2023
A non-volatile memory is a solid-state device that can retain data even power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with ...
Muhammad Awais, Feng Zhao, Kuan Yew Cheong   +2 more
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NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

ACS Nano, 2010
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which was on a Nb-doped SrTiO(3) substrate containing terraces with a regular interval of about 100 nm and an atomically smooth surface. For the formation of the NiO RRAM nanocapacitor (Pt/NiO/graphene capacitor) array, an anodic aluminum oxide (AAO) nanotemplate with a ...
Son, JY, Shin, YH, Kim, H, Jang, HM
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Noise in Resistive Random Access Memory Devices

2020
This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN). In the last 10 years, RRAMs have gained enormous popularity and attracted the attention of many researchers and industries throughout the world.
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Optoelectronic resistive random access memory for neuromorphic vision sensors

Nature Nanotechnology, 2019
Neuromorphic visual systems have considerable potential to emulate basic functions of the human visual system even beyond the visible light region. However, the complex circuitry of artificial visual systems based on conventional image sensors, memory and processing units presents serious challenges in terms of device integration and power consumption.
Feichi Zhou, Zheng Zhou, Jiewei Chen, Tsz Hin Choy, Jingli Wang, Ning Zhang, Ziyuan Lin, Shimeng Yu, Jinfeng Kang, H.-S. Philip Wong, Yang Chai   +10 more
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Unipolar Resistance Switching in Polymeric Resistance Random Access Memories

Japanese Journal of Applied Physics, 2009
We investigate the characteristic features of unipolar resistance switching in polymeric devices based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and demonstrate the unipolar switching cycles controlled by a series resistor. The device with a set compliance current (CC) of 10 mA and a bottom electrode thickness (tBE) of 300
Kim, M, Kim, O
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