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The Role of Ionic Liquids at the Biological Interfaces in Bioelectronics
Advanced Science, EarlyView.Ionic liquids (ILs) are highlighted as key artificial ionic materials that bridge biological ion‐based signaling and electronic devices. By understanding their composition, structure, function relationships, and mechanisms, ILs can advance from high performance electrolyte to core materials enabling integrated, multifunctional bioelectronics for ...
Yeong‐sinn Ye +5 more
wiley +1 more source
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Optoelectronic resistive random access memory for neuromorphic vision sensors
Nature Nanotechnology, 2019Neuromorphic visual systems have considerable potential to emulate basic functions of the human visual system even beyond the visible light region. However, the complex circuitry of artificial visual systems based on conventional image sensors, memory and processing units presents serious challenges in terms of device integration and power consumption.
Feichi Zhou, Meicheng Li, Tsz Hin Choy
exaly +4 more sources
Advanced Functional Materials, 2022
This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI) semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which can be readily integrated with metal‐oxide n‐type counterparts for complementary circuit ...
Dhananjay Mishra +5 more
semanticscholar +1 more source
This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI) semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which can be readily integrated with metal‐oxide n‐type counterparts for complementary circuit ...
Dhananjay Mishra +5 more
semanticscholar +1 more source
Application of Resistive Random Access Memory in Hardware Security: A Review
Advanced Electronic Materials, 2021Nowadays, advancements in the design of trusted system environments are relying on security provided by hardware‐based primitives, while replacing resource‐hungry software security measures. Emerging nonvolatile memory devices are promising candidates to
Gokulnath Rajendran +3 more
semanticscholar +1 more source
Physica Status Solidi (a), 2021
The recent progress of selector and self‐rectifying devices for resistive random‐access memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak‐path current issue, and ...
T. Dongale +5 more
semanticscholar +1 more source
The recent progress of selector and self‐rectifying devices for resistive random‐access memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak‐path current issue, and ...
T. Dongale +5 more
semanticscholar +1 more source
Advanced Functional Materials, 2021
Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies.
Chujun Yin +11 more
semanticscholar +1 more source
Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies.
Chujun Yin +11 more
semanticscholar +1 more source
Coding for Resistive Random-Access Memory Channels
GLOBECOM 2020 - 2020 IEEE Global Communications Conference, 2020In this paper, we propose channel coding techniques that can mitigate both the sneak-path interference and the channel noise for resistive random-access memory (ReRAM) channels. The main challenge is that the sneak-path interference is data-dependent, and also correlated within a memory array, and hence the conventional error correction coding scheme ...
Guanghui Song +4 more
openaire +1 more source
IEEE Electron Device Letters, 2021
In this work, a new operation scheme is developed to improve the state stability of multi-level resistive random-access memory (RRAM) array. We found that the state instability after programming is mainly derived from the excessive oxygen vacancies ...
Yulin Feng +8 more
semanticscholar +1 more source
In this work, a new operation scheme is developed to improve the state stability of multi-level resistive random-access memory (RRAM) array. We found that the state instability after programming is mainly derived from the excessive oxygen vacancies ...
Yulin Feng +8 more
semanticscholar +1 more source
Resistance random access memory switching mechanism
Journal of Applied Physics, 2007The properties of Pr0.7Ca0.3MnO3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. Based on the experimental data it is concluded that the resistance increase is due to localization of ...
Sheng T. Hsu +2 more
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Operation methods of resistive random access memory
Science China Technological Sciences, 2014In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM).
GuoMing Wang +12 more
openaire +1 more source