Results 251 to 260 of about 30,239 (285)

Analog memory characteristics of 1T1R MoOx resistive random access memory

2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016
Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resistance memory. In this study, we confirm that MoO x ReRAM shows analog memory characteristics by the control of compliance current. In addition, we propose
Mingyu Jo, Reon Katsumura, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Hideyuki Ando, Takashi Morie   +6 more
openaire   +1 more source

(Invited) Environmental Resistance of Resistive Random Access Memory

ECS Meeting Abstracts, 2016
Environmental resistance of memory devices must be clarified for putting them into practical use. This should be emphasized in particular for resistance random access memory (ReRAM), which switching mechanism is still unclear, because responses to environmental stresses are closely related to the mechanism.
openaire   +1 more source

Switching in polymeric resistance random-access memories (RRAMS)

Organic Electronics, 2008
Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L., Benvenho, A. R. V., De Leeuw, Dago M., Cölle, M., Stallinga, Peter, Verbakel, F., Taylor, D. M.   +6 more
openaire   +3 more sources

Resistive random access memories with nanodiamond dielectric films

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013), 2013
We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film.
null Chichun Lu, null Yuehchieh Chu, Yonhua Tzeng   +2 more
openaire   +1 more source

Resistive random-access memory based on ratioed memristors

Nature Electronics, 2018
Resistive random-access memories made from memristor crossbar arrays could provide the next generation of non-volatile memories. However, integrating large memristor crossbar arrays is challenging due to the high power consumption that originates from leakage currents (known as the sneak-path problem) and the large device-to-device and cycle-to-cycle ...
Miguel Angel Lastras-Montaño, Kwang-Ting Cheng   +1 more
openaire   +2 more sources

Purely electronic nanometallic resistance switching random-access memory

MRS Bulletin, 2018
Abstract
Yang Lu, Jung Ho Yoon, Yanhao Dong, I.-Wei Chen   +3 more
openaire   +1 more source

Noble-Metal Based Random Alloy and Intermetallic Nanocrystals: Syntheses and Applications

Chemical Reviews, 2021
Ming Zhou, Can Li, Jiye Fang
exaly  

Computational advantage of quantum random sampling

Reviews of Modern Physics, 2023
Dominik Hangleiter, Jens Eisert
exaly  

Resistive Random Access Memory

2017
openaire   +1 more source

Quantum random number generators

Reviews of Modern Physics, 2017
Juan Carlos Garcia-Escartin
exaly