Results 271 to 280 of about 62,185 (316)

Noise in Resistive Random Access Memory Devices

2020
This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN). In the last 10 years, RRAMs have gained enormous popularity and attracted the attention of many researchers and industries throughout the world.
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In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Advanced Electronic Materials, 2020
This study demonstrates a synergistic approach of dual nanostructure engineering to improve the performance of AlOx‐based resistive random access memory (RRAM) devices.
S. Maikap, W. Banerjee
semanticscholar   +1 more source

Unipolar Resistance Switching in Polymeric Resistance Random Access Memories

Japanese Journal of Applied Physics, 2009
We investigate the characteristic features of unipolar resistance switching in polymeric devices based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and demonstrate the unipolar switching cycles controlled by a series resistor. The device with a set compliance current (CC) of 10 mA and a bottom electrode thickness (tBE) of 300
Kim, M, Kim, O
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Resistive Random Access Memory: A Review of Device Challenges

IETE Technical Review, 2019
With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device. Therefore, non-charge based memory technologies such as Resistive Random Access Memory (RRAM) become promising for future ...
Varshita Gupta, S. Kapur, Sneh Saurabh, Anuj Grover   +3 more
semanticscholar   +1 more source

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

ACS Applied Electronic Materials, 2020
We report a switching model that directly explains the change in activation energy (EAC) at different RESET stop voltages (Vstop) in HfO2-based resistive random access memory devices.
D. Loy, P. Dananjaya, Somsubhra Chakrabarti, K. H. Tan, S. C. W. Chow, E. Toh, W. Lew   +6 more
semanticscholar   +1 more source

Analog memory characteristics of 1T1R MoOx resistive random access memory

2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016
Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resistance memory. In this study, we confirm that MoO x ReRAM shows analog memory characteristics by the control of compliance current. In addition, we propose
Mingyu Jo, Reon Katsumura, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Hideyuki Ando, Takashi Morie   +6 more
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(Invited) Environmental Resistance of Resistive Random Access Memory

ECS Meeting Abstracts, 2016
Environmental resistance of memory devices must be clarified for putting them into practical use. This should be emphasized in particular for resistance random access memory (ReRAM), which switching mechanism is still unclear, because responses to environmental stresses are closely related to the mechanism.
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Switching in polymeric resistance random-access memories (RRAMS)

Organic Electronics, 2008
Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L., Benvenho, A. R. V., De Leeuw, Dago M., Cölle, M., Stallinga, Peter, Verbakel, F., Taylor, D. M.   +6 more
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Broadband photoelectric tunable quantum dot based resistive random access memory

, 2020
Photoelectric resistive random access memory (RRAM) is a promising optoelectronic technology that is being developed to overcome the Von Neumann bottleneck and improve the computing and access performance of current computer systems.
Zhiliang Chen, Yu Yu, Lufan Jin, Yifan Li, Qingyan Li, Tengteng Li, Jie Li, Hongliang Zhao, Yating Zhang, H. Dai, Jianquan Yao   +10 more
semanticscholar   +1 more source

Resistive random access memories with nanodiamond dielectric films

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013), 2013
We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film.
null Chichun Lu, null Yuehchieh Chu, Yonhua Tzeng   +2 more
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