Results 21 to 30 of about 62,185 (316)

A Collective Study on Modeling and Simulation of Resistive Random Access Memory [PDF]

Nanoscale Research Letters, 2018
In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working ...
Debashis Panda, Paritosh Piyush Sahu, Tseung Yuen Tseng   +2 more
doaj   +2 more sources

All Nonmetal Resistive Random Access Memory. [PDF]

Sci Rep, 2019
AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen TJ, Gismatulin A, Volodin V, Gritsenko V, Chin A.   +4 more
europepmc   +4 more sources

Conductance Quantization in Resistive Random Access Memory. [PDF]

Nanoscale Res Lett, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory.
Li Y, Long S, Liu Y, Hu C, Teng J, Liu Q, Lv H, Suñé J, Liu M.   +8 more
europepmc   +8 more sources

Overview of radiation effects on emerging non-volatile memory technologies [PDF]

Nuclear Technology and Radiation Protection, 2017
In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S., Dolićanin Edin, Lazarević Đorđe R., Lončar Boris B.   +3 more
doaj   +1 more source

A computing-in-memory macro based on three-dimensional resistive random-access memory

Nature Electronics, 2022
Non-volatile computing-in-memory macros that are based on two-dimensional arrays of memristors are of use in the development of artificial intelligence edge devices.
Qiang Huo, Yiming Yang, Yiming Wang, Dengyun Lei, Xiangqu Fu, Qirui Ren, Xiaoxin Xu, Q. Luo, Guozhong Xing, Chengying Chen, Xin Si, Hao Wu, Yiyang Yuan, Qiang Li, Xiaoran Li, Xinghua Wang, Meng-Fan Chang, Feng Zhang, Meilin Liu   +18 more
semanticscholar   +1 more source

A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

APL Materials, 2023
With the arrival of the era of big data, the conventional von Neumann architecture is now insufficient owing to its high latency and energy consumption that originate from its separated computing and memory units.
J. H. Yoon, Young-Woong Song, Wooho Ham, J. Park, J. Kwon   +4 more
semanticscholar   +1 more source

4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array

Advanced Intelligent Systems, 2022
To apply resistive random‐access memory (RRAM) to the neuromorphic system and improve performance, each cell in the array should be able to operate independently by reducing device variation. In addition, it is necessary to lower the operating current of
Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim   +6 more
semanticscholar   +1 more source

Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

Electronics, 2021
The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems.
Furqan Zahoor, F. Hussin, F. A. Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi, C. Y. Ooi, F. Rokhani   +6 more
semanticscholar   +1 more source

Research progress in flexible resistive random access memory materials

Cailiao gongcheng, 2020
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei   +9 more
doaj   +1 more source

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

Advanced Materials Interfaces, 2023
To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho   +8 more
doaj   +1 more source