Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
Nanomaterials, 2021 Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil +6 more
doaj +1 more source
A ZnTaOx Based Resistive Switching Random Access Memory [PDF]
ECS Solid State Letters, 2014 The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of
Zheng, K. +5 more
openaire +1 more source
Optimal Weight‐Splitting in Resistive Random Access Memory‐Based Computing‐in‐Memory Macros
Advanced Intelligent Systems, 2023 Computing‐in‐memory (CIM) is considered a feasible solution to the acceleration of multiply‐accumulate (MAC) operations at low power. The key to CIM is parallel MAC operations in the memory domain, and thus reductions in power consumption and memory ...
Choongseok Song +2 more
doaj +1 more source
Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning
Journal of Science: Advanced Materials and Devices, 2023 Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing.
Shubham V. Patil +9 more
doaj +1 more source
Physical Simulation of Si-Based Resistive Random-Access Memory Devices [PDF]
, 2015 We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been ...
Asenov, Asen +3 more
core +1 more source
Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]
, 2015 Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub +4 more
core +1 more source
Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]
, 2014 An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng +6 more
core +1 more source
Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices [PDF]
, 2017 Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory.
Asamitsu +71 more
core +1 more source
Materials Research Express, 2022 We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park +4 more
doaj +1 more source
How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]
, 2018 Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying +6 more
core +2 more sources