Results 31 to 40 of about 30,168 (284)
Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]
PLoS ONE, 2016 Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo +1 more
doaj +1 more source
Glucose-based resistive random access memory for transient electronics
Journal of Information Display, 2019 In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park +3 more
doaj +1 more source
Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory
Nanomaterials, 2016 ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai +5 more
doaj +1 more source
Research progresses of resistive random access memory [PDF]
SCIENTIA SINICA Physica, Mechanica & Astronomica, 2016 Resistive random access memory (RRAM) is one of the most promising candidates of next-generation non-volatile memories. Comparing with the traditional floating gate Flash memory, RRAM has advantages in cell structure, operation speed, scalability and ease of 3D integration. In this paper, the RRAM technology is systematically reviewed.
Qi LIU +3 more
openaire +1 more source
Advanced physical modeling of SiOx resistive random access memories [PDF]
, 2016 We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen +8 more
core +1 more source
Recent advances in resistive random access memory based on lead halide perovskite
InfoMat, 2021 Lead halide perovskites have attracted increasing attention in photovoltaic devices, light‐emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the
Jiayu Di +5 more
doaj +1 more source
Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping [PDF]
, 2017 The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the ...
Brunell, IF +12 more
core +2 more sources
Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays
APL Materials, 2018 Resistive random-access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-access memory, oxide random-access memory, and conductive ...
Scott H. Tan +5 more
doaj +1 more source
Memories - Materials, Devices, Circuits and Systems, 2023 Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored.
Shalu Saini +4 more
doaj +1 more source
An Indium-Free Transparent Resistive Switching Random Access Memory [PDF]
IEEE Electron Device Letters, 2011 We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3 -GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature.
Zheng, K. +6 more
openaire +4 more sources