Results 41 to 50 of about 30,168 (284)
Spinel ferrites for resistive random access memory applications
Emergent Materials, 2023 AbstractCutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries. Resistive random access memory (RRAM) is an emerging nonvolatile memory used for recording and reproducing the digital information. Earlier studies on RRAM applications suggest that spinel ferrite
Ketankumar Gayakvad +5 more
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Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices. [PDF]
, 2016 The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade.
Ahn, Geun Ho +9 more
core +1 more source
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
IEEE Journal of the Electron Devices Society, 2016 Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang +8 more
doaj +1 more source
Materials Research Express, 2020 Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail +6 more
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Simplified ZrTiOx-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode [PDF]
, 2014 A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO( x )/Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO( x )/Ni can be regarded as a resistive-switching random access ...
Cherng-En Sun +3 more
core +1 more source
npj Computational Materials, 2020 Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer.
Kena Zhang +5 more
doaj +1 more source
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Di Carlo, Stefano +3 more
core +1 more source
Resistive Random Access Memory (ReRAM)
International Journal of Research and Engineering, 2019 Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
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An overview of resistive random access memory devices [PDF]
Chinese Science Bulletin, 2011 With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and ...
Li, YingTao +5 more
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Molecular Oncology, EarlyView.Methods to improve antibody–drug conjugate (ADC) treatment durability in cancer therapy are needed. We utilized ADCs and immune‐stimulating antibody conjugates (ISACs), which are made from two non‐competitive antibodies, to enhance the entry of toxic payloads into cancer cells and deliver immunostimulatory agents into immune cells.
Tiexin Wang +3 more
wiley +1 more source