Results 41 to 50 of about 62,185 (316)
ACS Nano, 2021 We characterize the atomic processes that underlie forming, reset, and set in HfO2-based resistive random access memory (RRAM) cells through molecular dynamics (MD) simulations, using an extended charge equilibration method to describe external electric ...
M. Urquiza +4 more
semanticscholar +1 more source
Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]
PLoS ONE, 2016 Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo +1 more
doaj +1 more source
Impact of laser attacks on the switching behavior of RRAM devices [PDF]
, 2020 The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory ...
Arumi Delgado, Daniel +7 more
core +2 more sources
Advanced Intelligent Systems, 2022 Crossbars of resistive memories, or memristors, provide a road to reduce the energy consumption of artificial neural networks, by naturally implementing multiply accumulate operations, their most basic calculations.
E. Esmanhotto +6 more
semanticscholar +1 more source
Glucose-based resistive random access memory for transient electronics
Journal of Information Display, 2019 In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park +3 more
doaj +1 more source
Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory
Nanomaterials, 2016 ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai +5 more
doaj +1 more source
Research progresses of resistive random access memory [PDF]
SCIENTIA SINICA Physica, Mechanica & Astronomica, 2016 Resistive random access memory (RRAM) is one of the most promising candidates of next-generation non-volatile memories. Comparing with the traditional floating gate Flash memory, RRAM has advantages in cell structure, operation speed, scalability and ease of 3D integration. In this paper, the RRAM technology is systematically reviewed.
Qi LIU +3 more
openaire +1 more source
Advanced physical modeling of SiOx resistive random access memories [PDF]
, 2016 We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen +8 more
core +1 more source
Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays
APL Materials, 2018 Resistive random-access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-access memory, oxide random-access memory, and conductive ...
Scott H. Tan +5 more
doaj +1 more source
Memories - Materials, Devices, Circuits and Systems, 2023 Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored.
Shalu Saini +4 more
doaj +1 more source