Results 51 to 60 of about 62,185 (316)

Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping [PDF]

, 2017
The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the ...
Brunell, IF, Chalker, PR, Dawson, K, Dhanak, VR, Gibbon, JT, Guo, Y, Hall, S, Li, H, Potter, RJ, Robertson, J, Sedghi, N, Zhang, JF, Zhang, WD   +12 more
core   +2 more sources

An Indium-Free Transparent Resistive Switching Random Access Memory [PDF]

IEEE Electron Device Letters, 2011
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3 -GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature.
Zheng, K., Sun, X. W., Zhao, J. L., Wang, Y., Yu, H. Y., Demir, H. V., Teo, K. L.   +6 more
openaire   +4 more sources

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices. [PDF]

, 2016
The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade.
Ahn, Geun Ho, Chung, Seungjun, Jang, Jingon, Javey, Ali, Jeong, Heejun, Jeong, Hyunhak, Kim, Tae-Young, Lee, Takhee, Song, Younggul, Yoo, Daekyoung   +9 more
core   +1 more source

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing

Chemical Reviews
In the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy ...
D. Ielmini, G. Pedretti
semanticscholar   +1 more source

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

IEEE Journal of the Electron Devices Society, 2016
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang, Peng Huang, Bin Gao, Haitong Li, Zhe Chen, Yudi Zhao, Chen Liu, Lifeng Liu, Xiaoyan Liu   +8 more
doaj   +1 more source

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

Materials Research Express, 2020
Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail, Sobia Ali Khan, Mehr Khalid Rahmani, Junhyeok Choi, Zahida Batool, Anwar Manzoor Rana, Sungjun Kim   +6 more
doaj   +1 more source

Simplified ZrTiOx-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode [PDF]

, 2014
A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO( x )/Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO( x )/Ni can be regarded as a resistive-switching random access ...
Cherng-En Sun, Chia-Chun Lin, You-Tai Chang, Yung-Hsien Wu   +3 more
core   +1 more source

A Memristor as Multi-Bit Memory: Feasibility Analysis [PDF]

, 2015
The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies.
Bass, O., Fish, A., Naveh, D.
core   +2 more sources

Carbon Nanotube and Resistive Random Access Memory Based Unbalanced Ternary Logic Gates and Basic Arithmetic Circuits

IEEE Access, 2020
In this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor (CNTFET) and resistive random access memory (RRAM) is proposed.
Furqan Zahoor, T. Zulkifli, F. A. Khanday, S. A. Zainol Murad   +3 more
semanticscholar   +1 more source

Resistive Random Access Memory (ReRAM)

International Journal of Research and Engineering, 2019
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
openaire   +1 more source