Results 61 to 70 of about 62,185 (316)

An overview of resistive random access memory devices [PDF]

Chinese Science Bulletin, 2011
With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and ...
Li, YingTao, Long, ShiBing, Liu, Qi, Lü, HangBing, Liu, Su, Liu, Ming   +5 more
openaire   +1 more source

Function‐driven design of a surrogate interleukin‐2 receptor ligand

FEBS Letters, EarlyView.
Interleukin (IL)‐2 signaling can be achieved and precisely fine‐tuned through the affinity, distance, and orientation of the heterodimeric receptors with their ligands. We designed a biased IL‐2 surrogate ligand that selectively promotes effector T and natural killer cell activation and differentiation. Interleukin (IL) receptors play a pivotal role in
Ziwei Tang, Zelin Cheng, Teng Li, Fulian Wang, Liangminghui Zhang, Xiuxiu He, Lili Liu, Wei Wang, Aibin Liang, Guang Yang   +9 more
wiley   +1 more source

Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

Advanced Intelligent Systems, 2022
Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma   +7 more
doaj   +1 more source

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

, 2015
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (
Bennett, S., Burroughs, T., Chong, H., Deora, S., Gausepohl, S., Ji, B. L., Johnson, C., Kaushik, V., Li, H., Liehr, M., Passaro, M., Piccirillo, J., Rodgers, M., Smalley, M., Stamper, H., Veksler, D., Vivekanand, S., Ye, Q.   +17 more
core   +1 more source

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]

, 2008
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Di Carlo, Stefano, Prinetto, Paolo Ernesto, Savino, Alessandro, Scionti, A.   +3 more
core   +1 more source

Engineering of defects in resistive random access memory devices

, 2020
Defects are essential to switch the resistance states in resistive random-access memory (RRAM) devices. Controlled defects in such devices can lead to the stabilization of the switching performance, which is useful for high-density memory and ...
W. Banerjee, Qi Liu, H. Hwang
semanticscholar   +1 more source

Amorphous ZnO based resistive random access memory

RSC Advances, 2016
Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.
Yong Huang, Zihan Shen, Ye Wu, Xiaoqiu Wang, Shufang Zhang, Xiaoqin Shi, Haibo Zeng   +6 more
openaire   +1 more source

Combining antibody conjugates with cytotoxic and immune‐stimulating payloads maximizes anti‐cancer activity

Molecular Oncology, EarlyView.
Methods to improve antibody–drug conjugate (ADC) treatment durability in cancer therapy are needed. We utilized ADCs and immune‐stimulating antibody conjugates (ISACs), which are made from two non‐competitive antibodies, to enhance the entry of toxic payloads into cancer cells and deliver immunostimulatory agents into immune cells.
Tiexin Wang, Dong Jun Koo, Peter M. Tessier, Greg M. Thurber   +3 more
wiley   +1 more source

RRAM variability and its mitigation schemes [PDF]

, 2016
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve, Hamdioui, Said, Pouman, Peyman, Rubio Sola, Jose Antonio   +3 more
core   +1 more source

Will Memantine Exacerbate Seizures in People With Epilepsy? A Prospective Cohort Study

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective To evaluate whether add‐on memantine would exacerbate seizures in people with epilepsy. Methods This was a prospective cohort study. People with epilepsy diagnosed with cognitive impairment were consecutively invited. Those who agreed were followed up for at least 24 weeks.
Peiyu Wang, Lu Lu, Hui Gao, Qi Zhang, Jing Xiao, Josemir W. Sander, Weixi Xiong, Dong Zhou   +7 more
wiley   +1 more source