Results 71 to 80 of about 62,185 (316)

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

open access: yesAdvances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu   +4 more
doaj   +1 more source

Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device

open access: yesMaterials Research Express, 2021
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj   +1 more source

Total dose hardness of TiN/HfOx/TiN resistive random access memory

open access: yes, 2014
Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and
de Groot, Kees   +5 more
core   +1 more source

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

open access: yes
Embedded memory, which heavily relies on the manufacturing process, has been widely adopted in various industrial applications. As the field of embedded memory continues to evolve, innovative strategies are emerging to enhance performance.
Zijian Wang   +9 more
semanticscholar   +1 more source

Comprehensive Examination on Resistive Random Access Memory

open access: yesInternational Journal of Recent Technology and Engineering (IJRTE), 2019
With the latest advances in materials science, resistive random access memory (RRAM) devices are attracting non-volatile, low power consumption, non-destructive read, and high density memory. Related performance parameters for RRAM devices include operating voltage, operating speed, resistivity, durability, retention time, device yield, and multi-level
Dr.K.G. Dharani*   +2 more
openaire   +1 more source

Unraveling the Molecular Mechanisms of Glioma Recurrence: A Study Integrating Single‐Cell and Spatial Transcriptomics

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Glioma recurrence severely impacts patient prognosis, with current treatments showing limited efficacy. Traditional methods struggle to analyze recurrence mechanisms due to challenges in assessing tumor heterogeneity, spatial dynamics, and gene networks.
Lei Qiu   +10 more
wiley   +1 more source

Computational Capacity and Energy Consumption of Complex Resistive Switch Networks [PDF]

open access: yes, 2015
Resistive switches are a class of emerging nanoelectronics devices that exhibit a wide variety of switching characteristics closely resembling behaviors of biological synapses.
Alireza Goudarzi   +4 more
core   +4 more sources

Clinical Practice Guideline for Evaluation and Management of Peripheral Nervous System Manifestations in Sjögren's Disease

open access: yesArthritis Care &Research, Accepted Article.
Objectives Sjögren's disease is an autoimmune disorder that can impact multiple organ systems, including the peripheral nervous system (PNS). PNS manifestations, which can exist concurrently, include mononeuropathies, polyneuropathies, and autonomic nervous system neuropathies. To help patients and providers in the decision‐making process, we developed
Anahita Deboo   +19 more
wiley   +1 more source

Electroforming Free Controlled Bipolar Resistive Switching in Al/CoFe2O4/FTO device with Self-Compliance Effect

open access: yes, 2018
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and
Khare, Neeraj, Munjal, Sandeep
core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai   +8 more
wiley   +1 more source

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