Results 71 to 80 of about 30,168 (284)

Reversible electrical percolation in a stretchable and self-healable silver-gradient nanocomposite bilayer

open access: yesNature Communications, 2022
Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access
Jinhong Park   +10 more
doaj   +1 more source

Energetic Behavior of Resistive Random-Access Memory Cells [PDF]

open access: yes, 2016
In order to investigate the switching characteristics of Resistive Random Access Memory cells (ReRAM) in terms of their thermodynamic free energy properties, we need to build a number of models that replicate the system.
Bisbee, Christopher M
core   +1 more source

Resistive Random Access Memory Variability and Its Mitigation Schemes

open access: yesJournal of Low Power Electronics, 2017
The need for design of new computing and storage paradigms has leaded to the emergence of new technologies and procedures. Among these technologies, emerging non-volatile memories such as RRAMs are getting intense attention due to their attractive characteristics such as scalability and CMOS friendly manufacturing.
Pouman, Peyman   +3 more
openaire   +3 more sources

Elinvar Materials: Recent Progress and Challenges

open access: yesAdvanced Engineering Materials, EarlyView.
Elinvar materials, exhibiting temperature‐invariant elastic modulus, are critical for precision instruments and emerging technologies. This article reviews recent progress in the field, with a focus on the anomalous thermoelastic behavior observed in key material systems.
Wenjie Li, Yang Ren
wiley   +1 more source

Prediction of semi-metallic tetragonal Hf2O3 and Zr2O3 from first-principles

open access: yes, 2012
A tetragonal phase is predicted for Hf2O3 and Zr2O3 using density functional theory. Starting from atomic and unit cell relaxations of substoichiometric monoclinic HfO2 and ZrO2, such tetragonal structures are only reached at zero temperature by ...
Blaise, Philippe   +3 more
core   +1 more source

Piezoresistive Monitoring of Carbon Nanomaterial‐Reinforced Epoxy Composites Under Cyclic and Fatigue Loading: A Review

open access: yesAdvanced Engineering Materials, EarlyView.
Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente   +3 more
wiley   +1 more source

Emulating long-term synaptic dynamics with memristive devices [PDF]

open access: yes, 2016
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS technology, the ...
Berdan, Radu   +5 more
core   +2 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks

open access: yesAdvanced Intelligent Systems, 2023
Resistive switching devices are candidates to be used as weight for the future hardware realization of neuronal networks. Herein, these resistive switches base on oxygen vacancy migration and can be toggled between different resistance states.
Carsten Funck   +6 more
doaj   +1 more source

New technology may help scale up memory storage capacity [PDF]

open access: yes, 2018
Silicon-based memory devices such as hard drives and flash drives are in high demand for gadgets that require storage. Conventional semiconductor material-based memory devices have limited scale-up ability to increase their storage capacity. Hence, there
J, Suryanarayana, Sahu, Dwipak
core  

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