Results 81 to 90 of about 62,185 (316)

Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory

AIP Advances, 2020
Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance.
Gang Cao, Xiaobing Yan, Jingjuan Wang, Zhenyu Zhou, Jianzhong Lou, Kaiyou Wang   +5 more
doaj   +1 more source

RRAM Reliability/Performance Characterization through Array Architectures Investigations [PDF]

, 2015
The reliability and performance characterization of each non-volatile memory technology requires the thorough investigation of dedicated array test structures that mimic the real operations of a fully functional integrated product.
Grossi, Alessandro, Olivo, Piero, Walczyk, Christian, Wenger, Christian, Zambelli, Cristian   +4 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Energetic Behavior of Resistive Random-Access Memory Cells [PDF]

, 2016
In order to investigate the switching characteristics of Resistive Random Access Memory cells (ReRAM) in terms of their thermodynamic free energy properties, we need to build a number of models that replicate the system.
Bisbee, Christopher M
core   +1 more source

Prediction of semi-metallic tetragonal Hf2O3 and Zr2O3 from first-principles

, 2012
A tetragonal phase is predicted for Hf2O3 and Zr2O3 using density functional theory. Starting from atomic and unit cell relaxations of substoichiometric monoclinic HfO2 and ZrO2, such tetragonal structures are only reached at zero temperature by ...
Blaise, Philippe, Fonseca, Leonardo R. C., Nishi, Yoshio, Xue, Kan-Hao   +3 more
core   +1 more source

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

ACS Applied Electronic Materials, 2020
Oxide-based memristors are two-terminal devices whose resistance can be modulated by the history of applied stimulation.
Seung Hwan Lee, John Moon, Yeonjoo Jeong, Jihang Lee, Xinyi Li, Huaqiang Wu, W. Lu   +6 more
semanticscholar   +1 more source

Resistive Random Access Memory Variability and Its Mitigation Schemes

Journal of Low Power Electronics, 2017
The need for design of new computing and storage paradigms has leaded to the emergence of new technologies and procedures. Among these technologies, emerging non-volatile memories such as RRAMs are getting intense attention due to their attractive characteristics such as scalability and CMOS friendly manufacturing.
Pouman, Peyman, Amat Bertran, Esteve, Hamdioui, Said, Rubio Sola, Jose Antonio   +3 more
openaire   +3 more sources

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Carbon-based memristors for resistive random access memory and neuromorphic applications

Chip
As a typical representative of nanomaterials, carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties, multi-dimensionality, multi-hybridization methods ...
Fan Yang, Zhaorui Liu, Xumin Ding, Yang Li, Cong Wang, Guozhen Shen   +5 more
doaj   +1 more source

Reversible electrical percolation in a stretchable and self-healable silver-gradient nanocomposite bilayer

Nature Communications, 2022
Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access
Jinhong Park, Duhwan Seong, Yong Jun Park, Sang Hyeok Park, Hyunjin Jung, Yewon Kim, Hyoung Won Baac, Mikyung Shin, Seunghyun Lee, Minbaek Lee, Donghee Son   +10 more
doaj   +1 more source