Results 91 to 100 of about 2,610 (194)

Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films

Journal of Materiomics, 2018
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu, Lai-Mun Wong, Shijie Wang, Kaiyang Zeng   +3 more
doaj   +1 more source

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Advanced Physics Research
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj   +1 more source

Energetic Behavior of Resistive Random-Access Memory Cells [PDF]

, 2016
In order to investigate the switching characteristics of Resistive Random Access Memory cells (ReRAM) in terms of their thermodynamic free energy properties, we need to build a number of models that replicate the system.
Bisbee, Christopher M
core   +1 more source

Memory effects in complex materials and nanoscale systems

, 2010
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales.
Di Ventra, Massimiliano, Pershin, Yuriy V.   +1 more
core   +1 more source

Honey-ReRAM Enabled Sustainable Edge AI System for IoT Applications

IEEE Access
This paper is toward a promising solution to address the environmental sustainability challenge in computing by building brain-inspired and green non-Von Neumann systems with Resistive Random-Access Memory (ReRAM) made from natural organic materials ...
Jinhui Wang, Feng Zhao, Mohammad Rafeeq Khan, Md. Mehedi Hasan Tanim, Zoe Templin, Harshvardhan Uppaluru   +5 more
doaj   +1 more source

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Scientific Reports, 2017
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating
Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov, Hyunsang Hwang   +5 more
doaj   +1 more source

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

, 2015
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task.
Guo, Zhonglu, Sun, Zhimei, Zhou, Jian, Zhu, Linggang   +3 more
core   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Advanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang, Yifu Huang, Chin‐Han Chung, Ying‐Chen Chen   +3 more
doaj   +1 more source

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

Cybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang, Mengxin Zheng, Shengyu Fan, Qian Lou, Rui Hou, Dan Meng, Mingzhe Zhang   +6 more
doaj   +1 more source

Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices

Materials Today Sustainability
Halide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
doaj   +1 more source