Results 101 to 110 of about 2,610 (194)

A Violet‐Light‐Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing

Advanced Electronic Materials
Due to the imitation of the neural functionalities of the human brain via optical modulation of resistance states, photoelectric resistive random access memory (ReRAM) devices attract extensive attraction for synaptic electronics and in‐memory computing ...
Saransh Shrivastava, Wei‐Sin Dai, Stephen Ekaputra Limantoro, Hans Juliano, Tseung‐Yuen Tseng   +4 more
doaj   +1 more source

Study on Fabrication of Forming-Free Resistance Random Access Memory (ReRAM)

Journal of the Vacuum Society of Japan, 2010
Takatoshi YODA, Kentaro KINOSHITA, Tatsuya MAKINO, Kazufumi DOBASHI, Satoru KISHIDA   +4 more
openaire   +2 more sources

Multi-valued logic synthesis for Resistive Random Access Memory (RERAM) based in-memory computing

, 2018
In-memory computing is a growing field of research which involves storing and processing of data at the memory. Resistive random access memory devices (RERAM) are among the class of memories which enable in-memory computing. RERAM devices are known to implement the material implication operation.
openaire   +1 more source

Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses

IEEE Access
Redox-based resistive random access memory (ReRAM) has emerged as a promising technology for next-generation non-volatile memory and neuromorphic computing applications.
Faisal Munir, Jari Klinkmann, Pascal Stasner, Siyuan Jia, Rainer Waser, Stefan Wiefels   +5 more
doaj   +1 more source

Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects

Advanced Electronic Materials
In the last 15 years memristors have been investigated as devices for high‐density, low‐power, non‐volatile, resistive random access memory (ReRAM) beyond Moore's law.
R. A. Wells, A. W. Robertson
doaj   +1 more source

Single-Event Effect Performance of a Commercial ReRAM [PDF]

We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets.
Buchner, Stephen, Chen, Dakai, Khachatrian, Ani, Kim, Hak S., LaBel, Kenneth, Phan, Anthony, Roche, Nicolas, Wilcox, Edward   +7 more
core   +1 more source

Ligand Substituent Effects on the Electronic Properties of Lindqvist‐Type Polyoxometalate Multi‐Level‐Switches in the Gas Phase, Solution and on Surfaces

Advanced Materials Interfaces
Although the intrinsic electronic properties of polyoxometalates (POMs) can be greatly influenced by modifying them with organic substituents, their resistive switching behavior on surfaces dependent on the organic substituents remains largely unexplored.
Fangshun Yang, Givi Kalandia, Marco Moors, Jonas Lorenz, Markus Rohdenburg, Xue‐Bin Wang, Wenjin Cao, Mhamad Aly Moussawi, Daniela Volke, Ralf Hoffmann, Jonas Warneke, Tatjana N. Parac‐Vogt, Kirill Yu. Monakhov   +12 more
doaj   +1 more source

Morphology analysis of the reconstruction of nano-filaments during aborted reset operation in Cu-based ReRAM devices. [PDF]

Sci Rep
Yasmeen S, DiFilippo A, Orlowski M.
europepmc   +1 more source

Low-operation voltage conductive-bridge random access memory based on amorphous NbS₂. [PDF]

Smart Mol, 2023
Lu B, Hu D, Wu M, Yang R, Ding Y, Huang J, Zhang Q, Ye Z, Hou Y, Lu J.   +9 more
europepmc   +1 more source

Anisotropic Resistive Switching in NiO Thin Films Deposited on Stepped MgO Substrates. [PDF]

Nanomaterials (Basel)
Duisebayev T, Zhazitov M, Abdullah M, Tezekbay Y, Syrlybekov A, Ibraimov M, Khaniyev B, Serikov T, Nuraje N, Toktarbaiuly O.   +9 more
europepmc   +1 more source