Results 151 to 160 of about 2,610 (194)

The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)

Nanotechnology, 2020
In this work, we have inspected the theoretical resistive switching properties of two ReRAM models based on heterojunction structures of Cu/SiO x nanoparticles (NPs)/Si and Si/SiO x NPs/Si, in which dielectric layers of the silica nanoparticles present dislocations at bicrystal interfaces. To validate the theoretical model, a charge storage device with
Yu-Li Chen   +5 more
openaire   +2 more sources

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

Proceedings of the IEEE, 2010
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also
Hiroyuki Akinaga, Hisashi Shima
openaire   +1 more source

Vertically-waveguide-coupled BaTiO3-based microdisk optical resonator equipped with the functionality of resistive random-access memory (ReRAM)

Integrated Optics: Devices, Materials, and Technologies XXV, 2021
The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and
Ricky W. Chuang   +3 more
openaire   +1 more source

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

ACS Applied Electronic Materials, 2019
Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capabi...
Cecilia Giovinazzo   +5 more
openaire   +2 more sources

The integrated vertically coupled resistive random-access memory (ReRAM)-based microdisk resonator and the relevant performance evaluation

Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized.
Ricky W. Chuang   +2 more
openaire   +1 more source

The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices

Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile ...
Ricky W. Chuang   +3 more
openaire   +1 more source

Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)

Journal of Solid State Electrochemistry, 2013
A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron ...
Michiko Yoshitake   +4 more
openaire   +1 more source

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