Results 11 to 20 of about 2,590 (174)

High-Quality Single-Crystalline β-Ga₂O₃ Nanowires: Synthesis to Nonvolatile Memory Applications

Nanomaterials, 2021
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar, Gang-Han Tsai, Pei-Fang Chung, Babu Balraj, Yen-Fu Lin, Mon-Shu Ho   +5 more
doaj   +1 more source

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

IEEE Open Journal of Circuits and Systems, 2021
Resistive random access memory (ReRAM)-based computing in-memory (CIM) is a promising solution to overcome the von-Neumann bottleneck in conventional computing architectures. We propose a reconfigurable ReRAM architecture using a novel 4T2R bit-cell that
Yuzong Chen, Lu Lu, Bongjin Kim, Tony Tae-Hyoung Kim   +3 more
doaj   +1 more source

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

IEEE Access, 2022
In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian, Daniel Leon, Francisco J. Franco, Juan C. Fabero, Manon Letiche, Yolanda Morilla, Pedro Martin-Holgado, Helmut Puchner, Hortensia Mecha, Juan A. Clemente   +9 more
doaj   +1 more source

A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

Advanced Intelligent Systems, 2022
As the demands of big data applications and deep learning continue to rise, the industry is increasingly looking to artificial intelligence (AI) accelerators.
Fuxi Cai, She-Hwa Yen, Apurva Uppala, Luke Thomas, Tianchi Liu, Peter Fu, Xiaofeng Zhang, Ambrose Low, Deepak Kamalanathan, Joe Hsu, Buvna Ayyagari-Sangamalli   +10 more
doaj   +1 more source

How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]

, 2018
Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying, Choudhary, Satyan, De Roo, Jonathan, De Keukeleere, Katrien, Van Driessche, Isabel, Crosby, Alfred J, Nonnenmann, Stephen S   +6 more
core   +2 more sources

Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Nanoscale Research Letters, 2022
Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan, Seongjae Cho, Byung-Gook Park   +2 more
doaj   +1 more source

Crossbar-based memristive logic-in-memory architecture [PDF]

, 2017
The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years.
Abustelema, Angel, Papandroulikadis, Georgios, Rubio Sola, Jose Antonio, Sirakoulis, Georgios, Vourkas, Ioannis   +4 more
core   +2 more sources

Emulating long-term synaptic dynamics with memristive devices [PDF]

, 2016
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS technology, the ...
Berdan, Radu, Khiat, Ali, Prodromakis, Themistoklis, Salaoru, Iulia, Vasilaki, Eleni, Wei, Shari Lim   +5 more
core   +2 more sources

Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution [PDF]

, 2014
Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications.
MacLaren, DA, McVitie, Stephen, Parreira, Pedro   +2 more
core   +1 more source

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

APL Materials, 2021
The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices.
Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon   +7 more
doaj   +1 more source