Results 41 to 50 of about 2,610 (194)

On the variability-aware design of memristor-based logic circuits [PDF]

, 2018
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new ...
Escudero López, Manuel, Moll Echeto, Francisco de Borja, Rubio Sola, Jose Antonio, Vourkas, Ioannis   +3 more
core   +1 more source

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Advanced Electronic Materials
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications.
Manvendra Chauhan, Sumit Choudhary, Satinder K. Sharma   +2 more
doaj   +1 more source

Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching

Advanced Electronic Materials, 2023
Advanced resistive random‐access memory (ReRAM) devices based on resistive switching (RS) have been intensely studied for future high‐density nonvolatile memory devices owing to their high scalability, simplified integration, fast operation, and ultralow
SunHwa Min, Da Seul Hyeon, Gabriel Jang, Jisoo Choi, Jeongwoo Seo, Soyeong Kwon, Dong‐Wook Kim, Jin Pyo Hong   +7 more
doaj   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Demonstration of transfer learning using 14 nm technology analog ReRAM array

Frontiers in Electronics
Analog memory presents a promising solution in the face of the growing demand for energy-efficient artificial intelligence (AI) at the edge. In this study, we demonstrate efficient deep neural network transfer learning utilizing hardware and algorithm co-
Fabia Farlin Athena, Omobayode Fagbohungbe, Nanbo Gong, Malte J. Rasch, Jimmy Penaloza, SoonCheon Seo, Arthur Gasasira, Paul Solomon, Valeria Bragaglia, Steven Consiglio, Hisashi Higuchi, Chanro Park, Kevin Brew, Paul Jamison, Christopher Catano, Iqbal Saraf, Claire Silvestre, Xuefeng Liu, Babar Khan, Nikhil Jain, Steven McDermott, Rick Johnson, I. Estrada-Raygoza, Juntao Li, Tayfun Gokmen, Ning Li, Ruturaj Pujari, Fabio Carta, Hiroyuki Miyazoe, Martin M. Frank, Antonio La Porta, Devi Koty, Qingyun Yang, Robert D. Clark, Kandabara Tapily, Cory Wajda, Aelan Mosden, Jeff Shearer, Andrew Metz, Sean Teehan, Nicole Saulnier, Bert Offrein, Takaaki Tsunomura, Gert Leusink, Vijay Narayanan, Takashi Ando   +45 more
doaj   +1 more source

A Novel ReRAM-Based Architecture of Field Sequential Color Driver for High-Resolution LCoS Displays

IEEE Access, 2020
Liquid crystal on-silicon (LCoS) display is one of the most representative micro-display technologies, and is widely adopted in virtual reality (VR) and augmented reality (AR) devices thanks to a relatively simple structure using a semiconductor ...
Youngsun Han, Dongmin Kim, Yongtae Kim
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory [PDF]

, 2014
In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (I-LRS).
Baek I. G., Chen H. Y., Daeseok Lee, Euijun Cha, Govoreanu B., Hyunsang Hwang, Jaesung Park, Jeonghwan Song, Jiyong Woo, Kibong Moon, Kim S. H., Lee H. D., Lee M. J., Lee W. T., Park S. G., Sangheon Lee, Woo J. Y., Yunmo Koo   +17 more
core   +1 more source

The nature of column boundaries in micro-structured silicon oxide nanolayers

APL Materials, 2021
Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers.
K. Patel, J. Cottom, A. Mehonic, W. H. Ng, A. J. Kenyon, M. Bosman, A. L. Shluger   +6 more
doaj   +1 more source

Lead‐Free Bismuth Halide Perovskite Memristors: Low‐Voltage Switching and Physical Modeling of Resistive Hysteresis

Advanced Materials Technologies, EarlyView.
Lead‐free bismuth halide perovskite memristors exhibit stable low‐voltage resistive switching behavior. The conductance‐activated quasi‐linear memristor model quantitatively reproduces the experimental hysteresis, confirming ion migration‐driven filament dynamics.
So‐Yeon Kim, Gonzalo Rivera‐Sierra, Bitania Shiferaw Mengesha, Benjamin Iniguez, Juan Bisquert   +4 more
wiley   +1 more source