Results 61 to 70 of about 2,610 (194)

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko   +3 more
wiley   +1 more source

GraphR: Accelerating Graph Processing Using ReRAM

open access: yes, 2017
This paper presents GRAPHR, the first ReRAM-based graph processing accelerator. GRAPHR follows the principle of near-data processing and explores the opportunity of performing massive parallel analog operations with low hardware and energy cost.
Chen, Yiran   +4 more
core   +1 more source

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays [PDF]

open access: yes, 2016
The forming process, which corresponds to the activation of the switching filament in Resistive Random Access Memory (RRAM) arrays, has a strong impact on the cells’ performances.
Grossi, Alessandro   +6 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

open access: yes, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source

Tolerating Noise Effects in Processing‐in‐Memory Systems for Neural Networks: A Hardware–Software Codesign Perspective

open access: yesAdvanced Intelligent Systems, 2022
Neural networks have been widely used for advanced tasks from image recognition to natural language processing. Many recent works focus on improving the efficiency of executing neural networks in diverse applications.
Xiaoxuan Yang   +3 more
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

open access: yesAdvanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan   +5 more
wiley   +1 more source

Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications [PDF]

open access: yes
A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior.
Lee, JS, Un-Bin Han
core   +1 more source

Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO2 ReRAM Devices

open access: yesAdvanced Electronic Materials, 2023
Dielectric breakdown (BD) is known to cause component failure in electronic devices and high‐voltage power lines over many decades. In recent years, this failure mechanism has been exploited to intentionally form nanoscale filaments in resistive random ...
Ernest Y. Wu, Takashi Ando, Paul Jamison
doaj   +1 more source

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

open access: yesAdvanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad   +4 more
wiley   +1 more source

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