Results 71 to 80 of about 2,610 (194)
Variability-tolerant memristor-based ratioed logic in crossbar array [PDF]
, 2018 The final publication is available at ACM via http://dx.doi.org/10.1145/3232195.3232213The advent of the first TiO2-based memristor in 2008 revived the scientific interest both from academia and industry for this de- vice technology, with several ...
Escudero López, Manuel +3 more
core +1 more source
Micromachines, 2019 Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory ...
Lei Li, Guangming Li
doaj +1 more source
InfoMat, EarlyView.Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda +7 more
wiley +1 more source
A data-driven Verilog-A ReRam model
The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic yet computationally efficient device models.
Khiat, Ali +4 more
core +1 more source
Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)
, 2019 Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high switching speed, excellent scalability, and low power consumption together with accessible ...
openaire +1 more source
GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays
AIP AdvancesIn this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx.
Hyun Kyu Seo +2 more
doaj +1 more source
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Neuro-memristive Circuits for Edge Computing: A review
, 2018 The volume, veracity, variability, and velocity of data produced from the ever-increasing network of sensors connected to Internet pose challenges for power management, scalability, and sustainability of cloud computing infrastructure.
Chua, Leon O. +2 more
core +1 more source
Advanced Materials Interfaces, Volume 13, Issue 6, 16 March 2026.Mixed halide perovskites suffer from photo‐induced phase segregation, leading to compositional instability and degraded device performance. This review summarizes the dynamic behavior and kinetics of phase segregation in thin films under external stimuli, analyzes compositional and environmental effects, and proposes suppression strategies to enhance ...
Yong Hyun Kim, Hyojung Kim
wiley +1 more source
Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method
Micromachines, 2019 This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray ...
Paolo Bondavalli +5 more
doaj +1 more source