Results 81 to 90 of about 2,610 (194)

One-Dimensional (NH=CINH3)3PbI5 Perovskite for Ultralow Power Consumption Resistive Memory

Research, 2021
Organic-inorganic hybrid perovskites (OIHPs) have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth, mobile ions, and adjustable dimensions.
Xuefen Song, Hao Yin, Qing Chang, Yuchi Qian, Chongguang Lyu, Huihua Min, Xinrong Zong, Chao Liu, Yinyu Fang, Zhengchun Cheng, Tianshi Qin, Wei Huang, Lin Wang   +12 more
doaj   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration

IEEE Access
Short-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing.
Xiaohua Liu, Yang Chen, Nils Kopperberg, Oliver Solfronk, Susanne Hoffmann-Eifert, Stephan Menzel, Rainer Waser, Stefan Wiefels   +7 more
doaj   +1 more source

Designing Memristive Materials for Artificial Dynamic Intelligence

Advanced Intelligent Discovery, Volume 2, Issue 1, February 2026.
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley   +1 more source

SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography [PDF]

, 2014
textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and
Ji, Li, active 21st century
core  

Energy-Accuracy Trade-Offs for Resistive In-Memory Computing Architectures

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Resistive in-memory computing (IMC) architectures currently lag behind SRAM IMCs and digital accelerators in both energy efficiency and compute density due to their low compute accuracy.
Saion K. Roy, Naresh R. Shanbhag
doaj   +1 more source

Recent Progress in Memristor Array‐Based Neuromorphic Computing for on‐Chip Vector‐Matrix Multiplication

Advanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.
Recent efforts of memristor array‐based hardware neuromorphic computing are discussed for efficient application of VMM on‐chip level in terms of circuit integration and actual application of AI algorithms. The parallel data processing principle of VMM operation is briefly reviewed, and hardware VMM is presented including convolutional transformation ...
Jingon Jang, Sang‐gyun Gi
wiley   +1 more source

Update Disturbance‐Resilient Analog ReRAM Crossbar Arrays for In‐Memory Deep Learning Accelerators

Advanced Science, Volume 13, Issue 4, 19 January 2026.
Conductive metal oxide/HfOx analog ReRAM on 350 nm technology is presented for in‐memory deep learning accelerators. The device exhibits analog and nonvolatile conductance switching and high resilience to update disturbances, which is supported by COMSOL Multiphysics simulations.
Wooseok Choi, Tommaso Stecconi, Donato Francesco Falcone, Matteo Galetta, Victoria Clerico, Elisa Zaccaria, Mamidala Saketh Ram, Antonio La Porta, Folkert Horst, Daniel Jubin, Matias Senger, Marilyne Sousa, Steffen Reidt, Ralph Heller, Bernabe Linares‐Barranco, Valeria Bragaglia, Bert Jan Offrein   +16 more
wiley   +1 more source

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
wiley   +1 more source

Advancements Towards Single Site Information Storage and Processing Using HfO2 Resistive Random Access Memory (ReRAM) [PDF]

, 2013
Resistive Random Access Memory (ReRAM) has attracted much attention among researchers due to its fast switching speeds, lower switching voltages, and feasible integration into industry compatible CMOS processing. These characteristics make ReRAM a viable
Hovish, Michael Quinlan
core   +1 more source