Results 171 to 180 of about 4,641 (217)

Verilog-A compact model for oxide-based resistive random access memory (RRAM)

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014
We demonstrate a dynamic Verilog-A RRAM compact model capable of simulating real-time DC cycling and pulsed operation device behavior, including random variability that is inherent to RRAM. This paper illustrates the physics and capabilities of the model. The model is verified using different sets of experimental data.
Zizhen Jiang, Shimeng Yu, Yi Wu, Jesse H. Engel, Ximeng Guan, H.-S. Philip Wong   +5 more
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Invited talk: Resistive random access memory (RRAM): Materials and devices

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED), 2013
Summary form only given. Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory ...
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A versatile compact model of resistive random-access memory (RRAM)

Solid-State Electronics
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). The model unifies the switching mechanisms of these RRAMs into a single framework.
Tung, Chien-Ting, Dabhi, Chetan Kumar, Salahuddin, Sayeef, Hu, Chenming   +3 more
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Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

2020 IEEE International Conference on Computational Electromagnetics (ICCEM), 2020
Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array.
Tan-Yi Li, Da-Wei Wang, Sichao Du, Wenchao Chen, Wen-Yan Yin   +4 more
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Low power highly flexible BiFeO₃-based resistive random access memory (RRAM) with the coexistence of negative differential resistance (NDR)

Physical Chemistry Chemical Physics, 2023
We demonstrated the resistive random access memory characteristics for Cu (top contact)/BFO/PMMA (active layer)/ITO (bottom electrode)/PET sheet as a flexible substrate device configuration with a potential for neuromorphic computing.
Chandra Prakash, Ankit K. Yadav, Ambesh Dixit   +2 more
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Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

IEEE Electron Device Letters, 2021
In this work, a new operation scheme is developed to improve the state stability of multi-level resistive random-access memory (RRAM) array. We found that the state instability after programming is mainly derived from the excessive oxygen vacancies generated by the abrupt SET process.
Yulin Feng, Peng Huang, Yudi Zhao, Yihao Shan, Yizhou Zhang, Zheng Zhou, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +8 more
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Electrothermal simulation of Resistive Random Access Memory(RRAM) array using finite difference method

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2016
Memory is very important in the present era of Internet of Thing (IoT) and Big Data, while Resistive Random Access Memory (RRAM) is a key member in the family of non-volatile memory. However, in the development of high density RRAM memory array, self-heat effect (SHE) as well as thermal crosstalk must be understood and controlled during its operation ...
null Yandong Luo, null Wenchao Chen, null Mingzhuo Cheng, null Kai Kang, null Wen-Yan Yin   +4 more
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Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM)

2009 IEEE International Memory Workshop, 2009
The multi-level operation of WO x based RRAM has been investigated. Improvement of our WO x process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell.
W. C. Chien, Y. C. Chen, K. P. Chang, E. K. Lai, Y. D. Yao, P. Lin, J. Gong, S. C. Tsai, S. H. Hsieh, C. F. Chen, K. Y. Hsieh, R. Liu, Chih-Yuan Lu   +12 more
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Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM)

ACS Applied Materials & Interfaces, 2020
In oxide-based RRAMs using reactive electrodes such as Al, the properties of spontaneously formed interfacial layers are critical factors in determining the resistive switching (RS) performance and reliability. This interfacial layer can provide the beneficial function of oxygen reservoir and series resistance, but is very labile and prone to ...
Chul Jin Park, Seung Woo Han, Moo Whan Shin   +2 more
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Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

physica status solidi (RRL) – Rapid Research Letters, 2019
Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on.
Hong Wang, Xiaobing Yan
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