Results 171 to 180 of about 11,242 (219)

Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

IEEE Electron Device Letters, 2021
In this work, a new operation scheme is developed to improve the state stability of multi-level resistive random-access memory (RRAM) array. We found that the state instability after programming is mainly derived from the excessive oxygen vacancies generated by the abrupt SET process.
Yulin Feng, Peng Huang, Yudi Zhao, Yihao Shan, Yizhou Zhang, Zheng Zhou, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +8 more
openaire   +2 more sources

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

physica status solidi (RRL) – Rapid Research Letters, 2019
Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on.
Hong Wang, Xiaobing Yan
openaire   +2 more sources

Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

Journal of Electroceramics, 2017
Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material ...
Chen HY, Brivio S, Chang CC, Frascaroli J, Hou TH, Hudec B, Liu M, Lv H, Molas G, Sohn J, Spiga S, Teja VM, Vianello E, Wong HSP   +13 more
openaire   +3 more sources

Invited talk: Resistive random access memory (RRAM): Materials and devices

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED), 2013
Summary form only given. Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory ...
W. Lu
openaire   +2 more sources

Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM)

ACS Applied Materials & Interfaces, 2020
In oxide-based RRAMs using reactive electrodes such as Al, the properties of spontaneously formed interfacial layers are critical factors in determining the resistive switching (RS) performance and reliability. This interfacial layer can provide the beneficial function of oxygen reservoir and series resistance, but is very labile and prone to ...
Chul Jin Park, Seung Woo Han, Moo Whan Shin   +2 more
openaire   +3 more sources

Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM)

2009 IEEE International Memory Workshop, 2009
The multi-level operation of WO x based RRAM has been investigated. Improvement of our WO x process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell.
W. C. Chien, Y. C. Chen, K. P. Chang, E. K. Lai, Y. D. Yao, P. Lin, J. Gong, S. C. Tsai, S. H. Hsieh, C. F. Chen, K. Y. Hsieh, R. Liu, Chih-Yuan Lu   +12 more
openaire   +2 more sources

Resistive Random Access Memory (RRAM)

Synthesis Lectures on Emerging Engineering Technologies, 2016
Shimeng Yu
openaire   +2 more sources

Metal oxide resistive random access memory (RRAM) technology

2014
G. Bersuker, D.C. Gilmer
openaire   +2 more sources

The role of Al atoms in resistive switching for Al/ZnO/Pt Resistive Random Access Memory (RRAM) device

Surfaces and Interfaces, 2022
Seung Woo Han, Chul Jin Park, Moo Whan Shin   +2 more
openaire   +2 more sources

Switching in polymeric resistance random-access memories (RRAMS)

Organic Electronics, 2008
Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L., Benvenho, A. R. V., De Leeuw, Dago M., Cölle, M., Stallinga, Peter, Verbakel, F., Taylor, D. M.   +6 more
openaire   +3 more sources