Results 191 to 200 of about 11,242 (219)

Dimensional Effect of Non-Polar Resistive Random Access Memory (RRAM) for Low-Power Memory Application

Journal of Nanoscience and Nanotechnology, 2012
The relationships between the resistive cell dimension and the related analytical parameters such as the forming voltage, set voltage, and reset current were investigated to implement high-density and low-power unipolar RRAM. It was shown that the formation process in unipolar switching is strongly related to the cell dimension in the sub-nm region ...
Kyung-Chang, Ryoo, Jeong-Hoon, Oh, Sunghun, Jung, Hongsik, Jeong, Byung-Gook, Park   +4 more
openaire   +2 more sources

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application

Advanced Functional Materials, 2022
This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI) semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which can be readily integrated with metal‐oxide n‐type counterparts for complementary circuit ...
Dhananjay Mishra, Krishnaiah Mokurala, Ajit Kumar, Seung Gi Seo, Hyeon‐Bin Jo, S. Jin   +5 more
semanticscholar   +1 more source

Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013
The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimize the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the
Liu Kai, Zhang Kailiang, Wang Fang, Zhao Jinshi, Wei Jun   +4 more
openaire   +1 more source

Application of Resistive Random Access Memory in Hardware Security: A Review

Advanced Electronic Materials, 2021
Nowadays, advancements in the design of trusted system environments are relying on security provided by hardware‐based primitives, while replacing resource‐hungry software security measures. Emerging nonvolatile memory devices are promising candidates to
Gokulnath Rajendran, W. Banerjee, A. Chattopadhyay, M. Aly   +3 more
semanticscholar   +1 more source

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

ACS Applied Materials and Interfaces, 2022
Resistive random-access memory (RRAM) has been extensively investigated for 20 years due to its excellent advantages, including scalability, switching speed, compatibility with the complementary metal oxide semiconductor process, and neuromorphic ...
Qingzong Xue, Yan-Kai Peng, Liang Cao, Yuanyuan Xia, Jianghu Liang, Chun‐Chao Chen, Ming Li, T. Hang   +7 more
semanticscholar   +1 more source

A versatile compact model of resistive random-access memory (RRAM)

Solid-State Electronics
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). The model unifies the switching mechanisms of these RRAMs into a single framework.
Tung, Chien-Ting, Dabhi, Chetan Kumar, Salahuddin, Sayeef, Hu, Chenming   +3 more
openaire   +2 more sources

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

2020 IEEE International Conference on Computational Electromagnetics (ICCEM), 2020
Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array.
Tan-Yi Li, Da-Wei Wang, Sichao Du, Wenchao Chen, Wen-Yan Yin   +4 more
openaire   +1 more source

Low power highly flexible BiFeO₃-based resistive random access memory (RRAM) with the coexistence of negative differential resistance (NDR)

Physical Chemistry Chemical Physics, 2023
We demonstrated the resistive random access memory characteristics for Cu (top contact)/BFO/PMMA (active layer)/ITO (bottom electrode)/PET sheet as a flexible substrate device configuration with a potential for neuromorphic computing.
Chandra Prakash, Ankit K. Yadav, Ambesh Dixit   +2 more
openaire   +2 more sources

Resistive Random Access Memory (RRAM) 1960–2025: Review

IEEE Electron Devices Reviews
Memory technologies have always been a cornerstone of modern electronics. The introduction of random-access memory (RAM) revolutionized the field, especially with the emergence of resistive random-access memory (RRAM) as one of the most promising ...
Salimeh Shahrabadi
semanticscholar   +1 more source

Electrothermal simulation of Resistive Random Access Memory(RRAM) array using finite difference method

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2016
Memory is very important in the present era of Internet of Thing (IoT) and Big Data, while Resistive Random Access Memory (RRAM) is a key member in the family of non-volatile memory. However, in the development of high density RRAM memory array, self-heat effect (SHE) as well as thermal crosstalk must be understood and controlled during its operation ...
null Yandong Luo, null Wenchao Chen, null Mingzhuo Cheng, null Kai Kang, null Wen-Yan Yin   +4 more
openaire   +1 more source