Results 91 to 100 of about 35,050 (276)
Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn
Advanced Functional Materials, EarlyView.Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed +7 more
wiley +1 more source
Integration of TaOx-based resistive-switching element and GaAs diode
APL Materials, 2013 We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element.
Z. Xu +6 more
doaj +1 more source
Physical Simulation of Si-Based Resistive Random-Access Memory Devices [PDF]
, 2015 We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been ...
Asenov, Asen +3 more
core +1 more source
Self‐Immolative Activatable Nanoassembly toward Immuno‐Photodynamic Therapy in TME
Advanced Functional Materials, EarlyView.A quinone methide‐gated, self‐immolative, H2O2‐responsive nano‐photosensitizer (Pyz/PS) is developed for targeted immuno‐photodynamic therapy. Pyz/PS selectively activates within tumor microenvironments, restores photosensitizer activity, generates ROS, and depletes intracellular GSH, enhancing oxidative stress.
Jing Li +10 more
wiley +1 more source
A graphene integrated highly transparent resistive switching memory device
APL Materials, 2018 We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the ...
Sita Dugu +5 more
doaj +1 more source
A Complementary Resistive Switch-based Crossbar Array Adder
, 2015 Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large ...
Linn, E. +3 more
core +1 more source
Microwave oven fabricated hybrid memristor devices for non-volatile memory storage [PDF]
, 2014 © 2014 IOP Publishing Ltd. Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming ...
Gray, R. J. +5 more
core +1 more source
Advanced Functional Materials, EarlyView.This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source
An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory
Advanced Electronic Materials, 2018 A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high ...
Yuxi Yang +5 more
doaj +1 more source
Recent advances in organic‐based materials for resistive memory applications
InfoMat, 2020 With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory ...
Yang Li +9 more
doaj +1 more source