Results 111 to 120 of about 35,050 (276)

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Simultaneous electric and magnetic field induced nonvolatile memory

, 2005
We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence.
Levy, P., Leyva, A. G., Quintero, M.
core   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

Advanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki, In Cheol Kwak, Seonkwon Kim, Jihyun Kim, Dong Gue Roe, Se‐Jin Kim, Joohoon Kang, Jeong Ho Cho   +7 more
wiley   +1 more source

Bipolar resistive switching behaviors of ITO nanowire networks

AIP Advances, 2016
We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior.
Qiang Li, Zhina Gong, Shuai Wang, Jiangteng Wang, Ye Zhang, Feng Yun   +5 more
doaj   +1 more source

A Survey of Memristive Threshold Logic Circuits

, 2016
In this paper, we review the different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of flow of neurotransmitters in the biological brain.
James, Alex Pappachen, Jayadevi, Deepthi Anirudhan, Maan, Akshay Kumar   +2 more
core   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source

Multilevel resistive switching memory in lead-free double perovskite La 2 NiFeO 6 films. [PDF]

Discov Nano, 2023
Qin Y, Gao Y, Lv F, Huang F, Liu F, Zhong T, Cui Y, Tian X.   +7 more
europepmc   +1 more source

Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories

Advanced Electronic Materials, 2019
AbstractResistive switching (RS) induced by electrical bias is observed in numerous materials, including 2D hexagonal boron nitride (hBN), which has been used in resistive random access memories (RRAMs) in recent years. For practical high‐density, cross‐point memory arrays, compared with bipolar memories, nonpolar (or unipolar) devices are preferable ...
Pingping Zhuang, Weiyi Lin, Jaehyun Ahn, Massimo Catalano, Harry Chou, Anupam Roy, Manuel Quevedo‐Lopez, Luigi Colombo, Weiwei Cai, Sanjay K. Banerjee   +9 more
openaire   +2 more sources