Results 121 to 130 of about 35,050 (276)

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. [PDF]

Polymers (Basel), 2023
Li B, Zhang S, Xu L, Su Q, Du B.
europepmc   +1 more source

Observation of Relativistic Domain Wall Motion in Amorphous Ferrimagnets

Advanced Functional Materials, EarlyView.
Domain walls in ferrimagnets and antiferromagnets move as relativistic sine‐Gordon solitons, with the spin‐wave velocity setting their speed limit. Such relativistic domain‐wall motion is demonstrated in amorphous GdFeCo near angular momentum compensation, where current‐driven walls reach 90% of the 2 kms−1 spin‐wave speed, enabling ultrafast, device ...
Pietro Diona, Luca Maranzana, Sergey Artyukhin, Giacomo Sala   +3 more
wiley   +1 more source

Improved Uniformity of TaO_x-Based Resistive Switching Memory Device by Inserting Thin SiO₂ Layer for Neuromorphic System. [PDF]

Materials (Basel), 2023
Ju D, Kim S, Jang J, Kim S.
europepmc   +1 more source

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

Advanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won, Jeongwoo Lee, Hyunwook Kim, Joon Hak Oh   +3 more
wiley   +1 more source

Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques. [PDF]

Sci Rep, 2023
Patil SM, Kundale SS, Sutar SS, Patil PJ, Teli AM, Beknalkar SA, Kamat RK, Bae J, Shin JC, Dongale TD.   +9 more
europepmc   +1 more source

Near‐Infrared Light‐Programmable Negative Differential Transconductance in Organic Electrochemical Transistors for Reconfigurable Logic

Advanced Functional Materials, EarlyView.
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi, Christina J. Kousseff, Aristea Pavlou, Zeinab Hamid, Iain McCulloch, Fabrizio Torricelli, Paul W. M. Blom, Paschalis Gkoupidenis   +7 more
wiley   +1 more source

Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications

Chips
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications.
Biswajit Jana, Ayan Roy Chaudhuri
doaj   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source

Improved Performance of NbO_x Resistive Switching Memory by In-Situ N Doping. [PDF]

Nanomaterials (Basel), 2022
Xu J, Zhu Y, Liu Y, Wang H, Zou Z, Ma H, Wu X, Xiong R.   +7 more
europepmc   +1 more source